NE334S01-T1B NEC, NE334S01-T1B Datasheet - Page 9

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NE334S01-T1B

Manufacturer Part Number
NE334S01-T1B
Description
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Manufacturer
NEC
Datasheet
RECOMMENDED SOLDERING CONDITIONS
conditions.
<TYPES OF SURFACE MOUNT DEVICE>
Infrared ray reflow
Partial heating method
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E)
*:
Note: Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION:
Soldering process
Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor
with shottky barrier gate.
Peak package’s surface temperature: 230
seconds or below (210
Exposure limit*: None
Terminal temperature: 230
Exposure limit*: None
°
C and relative humidity at 65 % or less.
°
C or higher), Number of reflow process: 1,
Soldering conditions
°
C or below, Flow time: 10 seconds or below,
°
C or below, Reflow time: 30
NE334S01
IR30-00
Symbol
9

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