NE5500179A NEC, NE5500179A Datasheet - Page 3

• Manufacturer Part Number: NE5500179A
• Description: SILICON POWER MOS FET
• Manufacturer: NEC

TYPICAL CHARACTERISTICS (T
3.5
3.0
2.5
2.0
1.5
1.0
0.5
35
30
25
20
15
10
31
30
29
28
27
26
0
0.0
0
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
V
Step = 1.0 V
V
I
f = 1.9 GHz
Dset
GS
V
f = 1.9 GHz
P
DS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
in
= 10 V MAX.
= 4.8 V
2
= 100 mA
= 20 dBm
= 4.8 V
5
Drain to Source Voltage V
Gate to Source Voltage V
1.0
4
Input Power P
10
6
P
I
P
out
D
I
out
D
2.0
15
8
in
10
(dBm)
20
3.0
GS
DS
12
A
(V)
(V)
= +25 C)
25
14
Data Sheet PU10118EJ01V1DS
4.0
16
30
500
400
300
200
100
0
500
400
300
200
100
0
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
1 000
100
100
100
0.1
10
50
50
1
0
0
1.0
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
V
I
f = 1.9 GHz
Dset
V
f = 1.9 GHz
P
DS
V
DS
in
SET DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
DS
= 4.8 V
= 100 mA
= 20 dBm
= 4.8 V
= 4.8 V
5
Gate to Source Voltage V
Gate to Source Voltage V
1.5
1.0
Input Power P
add
10
d
2.0
2.0
15
in
add
d
(dBm)
20
GS
3.0
GS
2.5
NE5500179A
(V)
(V)
25
3.0
4.0
30
3