3SK135A NEC, 3SK135A Datasheet - Page 2

no-image

3SK135A

Manufacturer Part Number
3SK135A
Description
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
Manufacturer
NEC
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
3SK135A
Manufacturer:
NEC
Quantity:
36 000
Part Number:
3SK135A-T1
Manufacturer:
NEC
Quantity:
20 000
Part Number:
3SK135A-T2
Manufacturer:
ATI
Quantity:
900
Part Number:
3SK135A-T2
Manufacturer:
NEC
Quantity:
20 000
TYPICAL CHARACTERISTICS (T
2
400
300
200
100
25
20
15
10
5
0
4
3
2
1
0
0
–1.0
–1.0
V
V
f = 1 MHz
DS
DS
= 10 V
= 10 V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
V
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
T
25
G1S
0
A
– Ambient Temperature – ˚C
INPUT CAPACITANCE vs.
DRAIN CURRENT
– Gate1 to Source Voltage – V
I
D
I
I
D
D
– Drain Current – mA
= 5 mA at V
= 10 mA at V
50
1.0
0
2.0
75
G2S
4 V
G2S
6 V
= 4 V
= 4 V
1 V
V
3.0
A
G2S
100
= 25 ˚C)
2 V
= 0
+1.0
125
4.0
25
20
15
10
5
0
2
1
0
5
4
3
2
1
–1.0
–1.0
0
V
V
f = 1 MHz
V
f = 1 MHz
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
G2S
DS
DS
= 10 V
= 10 V
= 4 V
V
V
V
OUTPUT CAPACITANCE vs.
GATE 2 TO SOURCE VOLTAGE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
G1S
G2S
DS
0
I
D
– Drain to Source Voltage – V
I
– Gate1 to Source Voltage – V
= 10 mA at V
– Gate2 to Source Voltage – V
D
= 5 mA at V
1.0
10
0
G2S
V
G2S
G2S
2.0
= 4 V
= 4 V
1 V
V
–0.1 V
–0.2 V
–0.3 V
–0.4 V
= 0
G1S
2 V
= 0
3.0
6 V
4 V
3SK135A
+1.0
4.0
20

Related parts for 3SK135A