SLD302B Sony Corporation, SLD302B Datasheet

no-image

SLD302B

Manufacturer Part Number
SLD302B
Description
Block-type 200mW High Power Laser Diode
Manufacturer
Sony Corporation
Datasheet
Description
Features
• Compact size
• High power output
• Hole for thermistor
Applications
• Solid state laser excitation
• Medical use
Structure
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
• Recommended optical power output
• Reverse voltage
• Operating temperature
• Storage temperature
Pin Configuration
No.
The SLD302B is a high power laser diode mounted on a 3 3
It is ideal for applications which require a minimal distance between the laser facet and external optical parts.
GaAlAs double hetero-type laser diode
1
2
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Block-type 200mW High Power Laser Diode
LD cathode
LD anode
Function
3
Po = 200mW
3
5mm block
1 LD cathode
2 LD anode
Po
Po
V
Topr
Tstg
R
LD
–10 to +50
–40 to +85
– 1 –
200
180
2
mW
mW
5mm Copper block.
°C
°C
V
SLD302B
E89104A81-PS

Related parts for SLD302B

SLD302B Summary of contents

Page 1

... Block-type 200mW High Power Laser Diode Description The SLD302B is a high power laser diode mounted ideal for applications which require a minimal distance between the laser facet and external optical parts. Features • Compact size 3 3 5mm block • High power output Po = 200mW • ...

Page 2

... Conditions Min. Ith Iop P = 180mW O Vop P = 180mW 180mW 770 180mW O // ∆X ∆Y, ∆ 180mW O ∆ 180mW 0 – 2 – SLD302B (Tc = 25°C) Typ. Max. Unit 150 200 mA 400 500 mA 1.9 3.0 V 840 degree 12 17 ±300 µm ±100 ±3 degree 0.8 mW/mA ...

Page 3

... 30mW Differential efficiency vs. Temperature characteristics 1 180mW O 1.0 0 –10 – 3 – – Case temperature [ 180mW 150mW 100mW 75mW 50mW 25mW – Case temperature [ C] SLD302B 50 ...

Page 4

... Po – Optical power output [mW] Pulse width dependence of COD power 10 5.0 1.0 0.5 0.1 0.1 0.5 1.0 5.0 10 Pulse width [ s] COD (Catastrophic Optical Damage) Optical power output vs. Operating current 3 2.5 2.0 1.5 1.0 0 0.5 1.0 250 Iop – Operating current [A] Duty = 10 100 – 4 – SLD302B Pulse width = 1 s Duty = 10 PULSE CW 1.5 2.0 2.5 ...

Page 5

... Power Dependence of Wavelength 800 805 Wavelength [nm] 800 805 Wavelength [nm] 800 805 Wavelength [nm 40mW 810 800 120mW 810 800 200mW 810 – 5 – SLD302B 80mW 805 810 Wavelength [nm 160mW 805 810 Wavelength [nm] ...

Page 6

... Temperature Dependence of Wavelength (P 805 815 Wavelength [nm] 805 815 Wavelength [nm] 805 815 Wavelength [nm] = 180mW –6 C 825 805 825 805 825 – 6 – SLD302B 815 825 Wavelength [nm 815 825 Wavelength [nm] ...

Page 7

... Package Outline Unit: mm 1.0 1.5 SONY CODE EIAJ CODE JEDEC CODE M – 261 5.0 ± 0.1 Ø1.5 for Thermistor LD Chip Ceramic Contact Plate (LD Cathode) PACKAGE STRUCTURE M-261 PACKAGE WEIGHT – 7 – Body (LD Anode) 1g SLD302B ...

Related keywords