BFY280 Siemens Semiconductor Group, BFY280 Datasheet

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BFY280

Manufacturer Part Number
BFY280
Description
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
Manufacturer
Siemens Semiconductor Group
Datasheet
HiRel NPN Silicon RF Transistor
Features
¥ HiRel Discrete and Microwave Semiconductor
¥ For low noise, low power amplifiers at collector
¥ Hermetically sealed microwave package
¥
¥
¥ ESA/SCC Detail Spec. No.: 5611/006
ESD: E lectro s tatic d ischarge sensitive device, observe handling precautions!
Type
BFY 280 (ql)
(ql) Quality Level: P: Professional Quality, Ordering Code: Q97302026
(see Chapter Order Instructions for ordering example)
Table 1
Parameter
Collector-emitter voltage
Collector-emitter voltage,
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction soldering point
1)
2)
Semiconductor Group
currents from 0.2 mA to 8 mA
f
The maximum permissible base current for
T
T
S
= 7.2 GHz,
is measured on the collector lead at the soldering point to the pcb.
qualified
Maximum Ratings
F
-
Marking
= 2.5 dB at 2 GHz
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality, Ordering Code: Q97111414
T
2)
V
S
BE
£ 104 ° C
Ordering Code
see below
= 0
V
2)
FBE
measurements is 5 mA (spot measurement duration < 1 s).
1
Ordering Code: on request
Ordering Code: on request
Symbol
V
V
V
V
I
I
P
T
T
T
R
C
B
j
op
stg
CEO
CES
CBO
EBO
tot
th JS
Pin Configuration
C
E
Micro-X1
Limit Values
8
15
15
2
10
1.2
80
200
- 65 É + 200
- 65 É + 200
< 450
B
1)
Draft A04 1998-04-01
E
Package
Micro-X1
BFY 280
Unit
V
V
V
V
mA
mA
mW
° C
° C
° C
K/W

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BFY280 Summary of contents

Page 1

HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0 ¥ Hermetically sealed microwave package f F ¥ = 7.2 GHz, = ...

Page 2

Electrical Characteristics Table 2 DC Characteristics at Parameter Collector-base cutoff current Collector-emitter cutoff current = 0 Collector-base cutoff current V I ...

Page 3

Table 3 AC Characteristics at Parameter Transition frequency mA 500 MHz C CE Collector-base capacitance vbe = Collector-emitter capacitance ...

Page 4

... Ordering Form: Ordering Code: QÉ BFY280 (x) (ql) Ordering Example: Ordering Code: Q97111414 BFY280 ES For BFY280 in ESA Space Quality Level Further Information See our WWW-Pages: Ð Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm Ð HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division: Tel ...

Page 5

Figure 1 Micro-X1 Package Semiconductor Group 1.05 1.02 0.76 ±0 1.78 5 BFY 280 ±0.25 +0.05 0.1 -0.03 GXM05552 Draft A03 1998-04-01 ...

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