C3886A Toshiba Semiconductor, C3886A Datasheet
C3886A
Manufacturer Part Number
C3886A
Description
Search -----> 2SC3886A
Manufacturer
Toshiba Semiconductor
Datasheet
1.C3886A.pdf
(3 pages)
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www.DataSheet4U.com
Huandong Electronics
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3P(H)IS package
・High voltage ,high speed
APPLICATIONS
・Horizontal deflection output for high
・High speed switching regulator output
PINNING
Absolute maximum ratings (Ta=25
SYMBOL
resolution display
applications
V
V
V
PIN
T
I
P
T
CBO
CEO
EBO
I
CM
I
1
2
3
stg
C
B
C
j
DESCRIPTION
Base
Collector
Emitter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
PARAMETER
℃
)
Open base
Open collector
T
Open emitter
C
=25℃
Fig.1 simplified outline (TO-3P(H)IS) and symbol
CONDITIONS
Product Specification
-55~150
VALUE
2SC3886A
1500
600
150
15
50
5
8
4
UNIT
℃
℃
W
V
V
A
A
A
V
・
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C3886A Summary of contents
Page 1
... B P Collector power dissipation C Junction temperature Storage temperature stg Fig.1 simplified outline (TO-3P(H)IS) and symbol ℃ ) PARAMETER Open emitter Open base Open collector T =25℃ C Product Specification 2SC3886A CONDITIONS VALUE 1500 600 150 -55~150 ・ UNIT ℃ ...
Page 2
... =6A ;I =1. =1500V = =0. =10V =10V;f=1MHz E CB Resistive load I =6A ;I =-I =1. =33.3Ω 2SC3886A TYP. MAX UNIT V 5.0 V 1.5 V 1.0 mA μ MHz 210 pF μs 2.5 μs 0.15 ...
Page 3
... Huandong Electronics Silicon NPN Power Transistors PACKAGE OUTLINE www.DataSheet4U.com Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Product Specification 2SC3886A ...