C3886A Toshiba Semiconductor, C3886A Datasheet - Page 2

• Manufacturer Part Number: C3886A
• Description: Search -----> 2SC3886A
• Manufacturer: Toshiba Semiconductor

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Huandong Electronics
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
V
V
(BR)CEO
I
I
C
h
CEsat
CBO
EBO
BEsat
f
t
t
FE
OB
T
s
f
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
Storage time
Fall time
PARAMETER
I
I
I
V
V
I
I
I
Resistive load
I
R
C
C
C
C
C
E
CP
CB
EB
=0 ; V
L
=5mA ;I
=6A ;I
=6A ;I
=1A ; V
=0.1A ; V
=33.3Ω
=6A ;I
=5V; I
=1500V; I
2
B
B
CB
CONDITIONS
=1.5A
=1.5A
B1
CE
B
C
=10V;f=1MHz
=0
=-I
=0
CE
=5V
=10V
B2
E
=0
=1.2A
MIN
600
8
1
Product Specification
TYP.
210
15
2SC3886A
3
MAX
0.15
5.0
1.5
1.0
2.5
10
UNIT
MHz
μA
mA
μs
μs
pF
V
V
V