SXT2222A Siemens Semiconductor, SXT2222A Datasheet - Page 2

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SXT2222A

Manufacturer Part Number
SXT2222A
Description
NPN Silicon Switching Transistor
Manufacturer
Siemens Semiconductor
Datasheet
Electrical Characteristics
at T
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Collector cutoff current
V
Emitter-base cutoff current
V
Base cutoff current
V
DC current gain
I
I
I
I
I
I
I
Collector-emitter saturation voltage
I
I
Base-emitter saturation voltage
I
I
1)
Semiconductor Group
C
C
E
C
C
C
C
C
C
C
C
C
C
C
CB
CB
CE
EB
CE
= 10 mA
= 10 A
= 10 A
= 100 A, V
=
= 10 mA, V
= 10 mA, V
= 150 mA, V
= 150 mA, V
= 500 mA, V
= 150 mA, I
= 500 mA, I
= 150 mA, I
= 500 mA, I
Pulse test conditions:
A
= 60 V, I
= 60 V, I
= 30 V, V
= 3 V, I
= 30 V, V
= 25 ˚C, unless otherwise specified.
1 mA, V
C
E
E
= 0
BE
BE
= 0
= 0, T
CE
B
B
B
B
CE
CE
CE
CE
CE
CE
= 0.5 V
= – 3 V
= 15 mA
= 50 mA
= 15 mA
= 50 mA
= 10 V
= 10 V
= 10 V
= 10 V, T
= 10 V
= 1 V
= 10 V
A
t
= 125 ˚C
300 s, D 2 %.
A
= – 55 ˚C
1)
1)
2
Symbol
V
V
V
I
I
I
I
h
V
V
CB0
CEX
EB0
BL
FE
(BR)CE0
(BR)CB0
(BR)EB0
CEsat
BEsat
min.
40
75
6
35
50
75
35
100
50
40
0.6
Values
typ.
max.
10
10
10
10
20
300
0.3
1.0
1.2
2.0
SXT 2222 A
Unit
V
nA
nA
V
A

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