BU4523AW Philips Semiconductors, BU4523AW Datasheet - Page 2

• Manufacturer Part Number: BU4523AW
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Measured with half sine-wave voltage (curve tracer).
May 1998
Silicon Diffused Power Transistor
hs
SYMBOL
I
I
I
BV
V
V
V
h
h
hs
SYMBOL
t
t
t
t
CES
CES
EBO
s
f
s
f
FE
FE
CEOsust
CEsat
BEsat
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
EBO
30-60 Hz
Fig.1. Test circuit for V
PARAMETER
Collector cut-off current
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
PARAMETER
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Switching times (70 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
6V
100R
CEOsust
2
Oscilloscope
1R
100-200R
Horizontal
Vertical
.
+ 50v
CONDITIONS
V
V
T
V
I
I
L = 25 mH
I
I
I
I
CONDITIONS
I
(I
I
(I
B
B
C
C
C
C
Csat
Csat
j
B2
B2
BE
BE
EB
= 1 mA
= 0 A; I
= 8 A; I
= 8 A; I
= 1 A; V
= 8 A; V
= 125 ˚C
= -4.0 A)
= -3.9 A)
= 0 V; V
= 0 V; V
= 6 V; I
= 8.0 A;I
= 6.5 A;I
2
C
B
B
CE
CE
= 100 mA;
= 2 A
= 2 A
C
CE
CE
250
200
100
B1
B1
IC / mA
= 0 A
= 5 V
= 5 V
0
= V
= V
= 1.6 A
= 1.3 A
Fig.2. Oscilloscope display for V
CESMmax
CESMmax
;
MIN.
0.85
800
7.5
4.2
VCE / V
-
-
-
-
-
TYP.
TYP.
12.5
0.95
0.30
0.14
5.8
4.5
2.3
14
-
-
-
-
-
Product specification
BU4523AW
VCEOsust
MAX.
MAX.
0.40
100
min
1.0
2.0
3.0
1.1
7.3
5.5
CEOsust
-
-
-
-
-
Rev 1.000
.
UNIT
UNIT
mA
mA
V
V
V
V
A
s
s
s
s