BU4523AW Philips Semiconductors, BU4523AW Datasheet - Page 4

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BU4523AW

Manufacturer Part Number
BU4523AW
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
May 1998
Silicon Diffused Power Transistor
Fig.9. Typical collector-emitter saturation voltage.
Fig.10. Typical base-emitter saturation voltage.
Fig.11. Typical collector storage and fall time.
0.01
1.2
1.1
0.9
0.8
0.7
0.6
10
0.1
8
6
4
2
0
10
1
0
1
0
0.1
ts/tf / us
VBEsat / V
VCEsat / V
I
C
Ths = 25 C
Ths = 85 C
=8 A; T
IC = 8 A
1
1
1
j
= 85˚C; f = 16kHz
2
2
IC/IB = 5
ts
tf
IC = 6.5 A
10
BU4523AF/X 16kHz
Ths = 85 C
ICsat = 8 A
Freq = 16 kHz
3
3
Ths = 25 C
Ths = 85 C
BU4523AF/X
BU4523AF/X
IC / A
IB / A
IB / A
100
4
4
4
IBend
-VBB
120
110
100
0.001
0.01
90
80
70
60
50
40
30
20
10
0.1
0
10
1E-07
Fig.12. Normalised power dissipation.
1
Fig.13. Transient thermal impedance.
0
PD%
Zth K/W
0.05
0.02
0.5
0.2
0.1
0
Fig.14. Test Circuit RBSOA.
20
PD% = 100 P
LB
1E-05
40
60
1E-03
Ths / C
LC
t / s
80
P
Normalised Power Derating
D
VCC
D
/P
T.U.T.
with heatsink compound
D 25˚C
t
Product specification
p
100
T
1E-01
BU4523AW
D =
BU4523AW
120
t
T
p
t
Rev 1.000
140
1E+01
CFB
VCL

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