haf1008l Renesas Electronics Corporation., haf1008l Datasheet

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haf1008l

Manufacturer Part Number
haf1008l
Description
Silicon P Channel Mos Fet Series Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
HAF1008(L), HAF1008(S)
Silicon P Channel MOS FET Series Power Switching
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
Outline
Rev.1.00, May.13.2003, page 1 of 11
Logic level operation (-4 to -6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
LDPAK
G
Tempe-
rature
Sencing
Circuit
Gate resistor
Latch
Circuit
Gate
Shut-
down
Circuit
D
S
1
2
3
1
2
1. Gate
2. Drain
3. Source
3
REJ03G0027-0100Z
(Flange)
May.13.2003
Rev.1.00

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haf1008l Summary of contents

Page 1

HAF1008(L), HAF1008(S) Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit ...

Page 2

HAF1008(L), HAF1008(S) Absolute Maximum Ratings ( Item Symbol Drain to source voltage V DSS Gate to source voltage V GSS Gate to source voltage V GSS Drain current I D Drain peak current I (pulse) D Body-drain ...

Page 3

HAF1008(L), HAF1008(S) Electrical Characteristics ( Item Symbol Min Drain current I D1 Drain current I D2 Drain to source breakdown V (BR)DSS voltage Gate to source breakdown V (BR)GSS voltage Gate to source breakdown V (BR)GSS voltage ...

Page 4

HAF1008(L), HAF1008(S) Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics -50 - -40 -30 - Drain to Source Voltage V Rev.1.00, ...

Page 5

HAF1008(L), HAF1008(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage -1 -0.8 -0.6 -0.4 -0 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 100 Pulse Test I = -10 ...

Page 6

HAF1008(L), HAF1008(S) Body to Drain Diode Reverse recovery Time 500 200 100 -0.1 -0.2 -0 Reverse Drain Current ...

Page 7

HAF1008(L), HAF1008(S) Gate to Source Voltage vs. Shutdown Time of Load-Short Test -20 -15 - 100 1 m Shutdown Time of Load-Short Test Pw (S) Normalized Transient Thermal Impedance vs. Pulse ...

Page 8

HAF1008(L), HAF1008(S) Switching Time Test Circuit Vin Monitor D.U.T. R Vin 50Ω -10 V Rev.1.00, May.13.2003, page Switching Time Waveform Vout Vin Monitor 10 90% = -30 V 10% Vout td(on) 90% 90% 10% ...

Page 9

HAF1008(L), HAF1008(S) Package Dimensions 10.2 ± 0.3 2.54 ± 0.5 Rev.1.00, May.13.2003, page 4.44 ± 0.2 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 2.49 ± 0.2 + 0.2 0.86 – 0.1 0.76 ± 0.1 2.54 ...

Page 10

HAF1008(L), HAF1008(S) 10.2 ± 0.3 1.37 ± 0.2 1.3 ± 0.2 + 0.2 0.86 – 0.1 2.54 ± 0.5 2.54 ± 0.5 Rev.1.00, May.13.2003, page 4.44 ± 0.2 7.8 1.3 ± 0.15 6.6 2.49 ± 0.2 + ...

Page 11

HAF1008(L), HAF1008(S) Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with ...

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