haf1008l Renesas Electronics Corporation., haf1008l Datasheet - Page 5

no-image

haf1008l

Manufacturer Part Number
haf1008l
Description
Silicon P Channel Mos Fet Series Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
HAF1008(L), HAF1008(S)
Rev.1.00, May.13.2003, page 5 of 11
-0.8
-0.6
-0.4
-0.2
100
80
60
40
20
-1
0
-25
Static Drain to Source on State Resistance
0
Drain to Source Saturation Voltage vs.
V
Pulse Test
GS
Gate to Source Voltage
0
-10 V
= -4 V
-2
Gate to Source Voltage
Case Temperature
25
vs. Temperature
-4
50
I
D
= -10 A
75
-6
100 125 150
-10 A
Pulse Test
I
D
Tc ( C)
= -10 A
V
-8
GS
-5 A
-5 A
-5 A
(V)
-10
200
100
0.5
50
20
10
50
20
10
5
2
1
-0.1 -0.2
-0.1 -0.2
Static Drain to Source Sate Resistance
Pulse Test
Forward Transfer Admittance vs.
-0.5 -1
Drain Current I
Tc = -25 C
-0.5 -1
Drain Current I
vs. Drain Current
V
Drain Current
GS
75 C
= -4 V
-10 V
-2
-2
25 C
-5
-5
D
D
V
Pulse Test
DS
(A)
(A)
-10 -20
-10 -20
= -10 V
-50
-50

Related parts for haf1008l