haf1002l Renesas Electronics Corporation., haf1002l Datasheet

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haf1002l

Manufacturer Part Number
haf1002l
Description
Silicon P Channel Mos Fet Series Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
HAF1002(L), HAF1002(S)
Silicon P Channel MOS FET Series
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
Outline
Rev.2.00 Sep 07, 2005 page 1 of 8
Logic level operation (–4 to –6 V Gate drive)
High endurance capability against to the short circuit
Built-in the over temperature shut-down circuit
Latch type shut-down operation (Need 0 voltage recovery)
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
1
2
3
4
G
Tempe-
rature
Sensing
Circuit
Gate resistor
Latch
Circuit
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
Gate
Shut-
down
Circuit
D
S
1
2
3
4
(Previous: ADE-208-586)
REJ03G1133-0200
1. Gate
2. Drain
3. Source
4. Drain
Sep 07, 2005
Rev.2.00

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haf1002l Summary of contents

Page 1

HAF1002(L), HAF1002(S) Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit ...

Page 2

HAF1002(L), HAF1002(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value at ...

Page 3

HAF1002(L), HAF1002(S) Electrical Characteristics Item Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Static drain to source ...

Page 4

HAF1002(L), HAF1002(S) Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics –50 –10 V –40 –30 –20 – –2 –4 Drain to Source Voltage Drain to Source Saturation ...

Page 5

HAF1002(L), HAF1002(S) Static Drain to Source on State Resistance vs. Temperature 0. – 0.12 0.08 –10 V 0.04 0 – Case Temperature Body-Drain Diode Reverse Recovery Time 500 200 100 50 20 ...

Page 6

HAF1002(L), HAF1002(S) Gate to Source Voltage vs. Shutdown Time of Load-Short Test –12 – –8 –6 –4 –2 0 0.0001 0.001 0.01 Shutdown Time of Load-Short Test PW ( 0.5 0.3 0.1 0.03 ...

Page 7

HAF1002(L), HAF1002(S) Package Dimensions JEITA Package Code RENESAS Code  PRSS0004AE-A JEITA Package Code RENESAS Code SC-83 PRSS0004AE-B 10.2 ± 0.3 1.3 ± 0.2 2.54 ± 0.5 Rev.2.00 Sep 07, 2005 page Package Name MASS[Typ.] LDPAK(L) / ...

Page 8

HAF1002(L), HAF1002(S) Ordering Information Part Name HAF1002-90L Max: 50 pcs/sack HAF1002-90S Max: 50 pcs/sack HAF1002-90STL 1000 pcs/Reel HAF1002-90STR 1000 pcs/Reel Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production ...

Page 9

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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