haf1002l Renesas Electronics Corporation., haf1002l Datasheet - Page 5

• Manufacturer Part Number: haf1002l
• Description: Silicon P Channel Mos Fet Series Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAF1002(L), HAF1002(S)
Rev.2.00 Sep 07, 2005 page 5 of 8
0.20
0.16
0.12
0.08
0.04
500
200
100
–20
–16
–12
Static Drain to Source on State Resistance
50
20
10
–8
–4
–0.1 –0.2 –0.5 –1 –2
0
–40
0
0
Source to Drain Voltage
Reverse Drain Current
Pulse Test
di / dt = 50 A / µs
V
V
Case Temperature
GS
GS
Body-Drain Diode Reverse
Reverse Drain Current vs.
V
–0.4
= 0, Ta = 25°C
Source to Drain Voltage
GS
–10 V
0
= –5 V
= –4 V
vs. Temperature
Recovery Time
–0.8
40
I
D
= –10 A
–10 A
–1.2
80
–5 –10 –20
0 V
Tc (°C)
Pulse Test
–2, –5 A
I
–1.6
120
V
DR
SD
–5 A
–2 A
(A)
(V)
–2.0
160
–50
10000
3000
1000
100
300
100
0.5
0.5
50
20
10
50
20
10
–0.1 –0.2 –0.5 –1 –2
–0.1 –0.2 –0.5 –1 –2
5
2
1
5
2
1
0
Drain to Source Voltage V
Forward Transfer Admittance vs.
t r
V
f = 1 MHz
GS
t f
Switching Characteristics
–10
Typical Capacitance vs.
Drain to Source Voltage
= 0
Drain Current
Drain Current I
Tc = –25°C
t d(off)
Drain Current
–20
V
PW = 300 µs, duty ≤ 1 %
GS
75°C
= –5 V, V
t d(on)
–30
–5 –10 –20 –50
–5 –10 –20
25°C
I
V
Pulse Test
D
D
DS
DD
(A)
(A)
–40
= –10 V
= –30 V
DS
(V)
–50
–50