rjp30h1dpd Renesas Electronics Corporation., rjp30h1dpd Datasheet - Page 3

• Manufacturer Part Number: rjp30h1dpd
• Description: Silicon N Channel Igbt High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJP30H1DPD
Main Characteristics
R07DS0465EJ0200 Rev.2.00
Jun 15, 2011
1000
0.01
200
160
120
100
0.1
10
80
40
0
1
5
4
3
2
1
0
0.1
Collector to Emitter Saturation Voltage
0
Collector to Emitter Voltage V
0
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Voltage V
Ta = 25
1 shot pulse
Ta = 25
Pulse Test
Typical Output Characteristics (2)
Pulse Test
Ta = 25
Gate to Emitter Voltage V
Maximum Safe Operation Area
15 V
14 V
2
4
°
°
1
C
°
C
C
4
8
10
I
C
= 30 A
12
6
60 A
90 A
100
12 V
16
8
GE
CE
11 V
10 V
CE
9 V
8 V
7 V
6 V
(V)
1000
(V)
(V)
10
20
100
0.1
50
40
30
20
10
10
80
60
40
20
0
1
0
Collector to Emitter Saturation Voltage
0
0
Collector to Emitter Voltage V
1
Ta = 25
Pulse Test
Typical Output Characteristics (1)
V
Pulse Test
V
Typical Transfer Characteristics
Pulse Test
25°C 75°C
Gate to Emitter Voltage V
vs. Collector Current (Typical)
GE
CE
Tc = –25°C
15 V
= 15 V
= 10 V
Collector Current I
2
1
10 V
°
C
9 V
8 V
4
2
10
Tc = 75°C
6
3
–25°C
25°C
C
(A)
8
4
GE
Preliminary
7.5 V
6.5 V
5.5 V
CE
Page 3 of 6
7 V
6 V
(V)
(V)
100
10
5