tk14a55d TOSHIBA Semiconductor CORPORATION, tk14a55d Datasheet

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tk14a55d

Manufacturer Part Number
tk14a55d
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type ?-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TK14A55D
Manufacturer:
TOSHIBAHIBA
Quantity:
12 500
Part Number:
TK14A55D
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
This transistor is an electrostatic-sensitive device. Handle with care.
Low drain-source ON-resistance: R
High forward transfer admittance: ⎪Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
Characteristics
= 90 V, T
DC
Pulse (t = 1 ms)
ch
DSS
th
= 2.0 to 4.0 V (V
= 25°C (initial), L = 4.6 mH, R
(Note 1)
(Note 1)
(Note 2)
= 10 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
TK14A55D
V
V
fs
E
E
T
I
I
T
P
GSS
DSS
I
DP
AR
⎪ = 6.5 S (typ.)
AS
AR
stg
D
ch
R
R
D
Symbol
DS
th (ch-a)
th (ch-c)
= 0.31 Ω (typ.)
DS
= 10 V, I
= 550 V)
−55 to 150
Rating
550
±30
521
150
D
5.0
14
56
50
14
G
1
= 1 mA)
Max
62.5
= 25 Ω, I
2.5
AR
Unit
mJ
mJ
°C
°C
°C/W
°C/W
W
V
V
A
A
Unit
= 14 A
Weight: 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
Internal Connection
1: Gate
2: Drain
3: Source
1
2-10U1B
TK14A55D
SC-67
2008-11-10
Unit: mm
2
3

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tk14a55d Summary of contents

Page 1

... D E 521 5 150 °C ch −55 to 150 T °C stg Symbol Max Unit R 2.5 °C/W th (ch-c) R 62.5 °C/W th (ch- Ω TK14A55D Unit Gate 2: Drain 3: Source ⎯ JEDEC JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Internal Connection 2008-11-10 ...

Page 2

... Symbol Test Condition ⎯ ⎯ I DRP = DSF /dt = 100 A/μ TK14A55D Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 10 ⎯ ⎯ 550 ⎯ 2.0 4.0 ⎯ 0.31 0.37 ⎯ 1.8 6.5 ⎯ ⎯ 2300 ⎯ ⎯ 10 ⎯ ...

Page 3

... DRAIN-SOURCE VOLTAGE (V) GATE-SOURCE VOLTAGE V 10 COMMON SOURCE Tc = 25°C PULSE TEST 1 0.1 100 0.1 3 TK14A55D I – COMMON SOURCE 25°C PULSE TEST 7 6 – COMMON SOURCE Tc = 25℃ ...

Page 4

... PULSE TEST 0 −80 −40 100 (V) CASE TEMPERATURE Tc (°C) DYNAMIC INPUT / OUTPUT 500 400 V DS 300 200 100 0 160 0 TOTAL GATE CHARGE Q 4 TK14A55D I – −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 ( – ...

Page 5

... PULSE WIDTH t (s) w 600 500 400 300 200 100 CHANNEL TEMPEATURE (INITIAL 1000 (V) −15 V TEST CIRCUIT = 25 Ω 4 TK14A55D – 100 125 150 T (° VDSS WAVEFORM ⎛ ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 TK14A55D 20070701-EN GENERAL 2008-11-10 ...

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