sid400n12 Sirectifier Semiconductors, sid400n12 Datasheet - Page 2

• Manufacturer Part Number: sid400n12
• Description: Npt Igbt Modules
• Manufacturer: Sirectifier Semiconductors

Characteristics
IGBT
Inverse Diode
Thermal Characteristics
Mechanical Data
V
Symbol
R
E
V
V
R
V
F
R
R
on
CE(TO)
CC'+EE'
I
CE(sat)
C
t
t
V
I
GE(th)
C
L
th(j-c)D
M
CES
r
C
= V
d(on)
d(off)
M
RRM
th(c-s)
th(j-c)
Q
w
CE
t
t
E
(E
r
CE
(TO)
oes
r
f
ies
res
T
s
t
rr
rr
off
EC
)
V
V
T
V
I
under following conditions
V
res., terminal-chip T
under following conditions:
V
R
V
I
T
T
I
di/dt = 2000A/us
V
per IGBT
per Inverse Diode
per module
to heatsink M6
to terminals M6
C
F
F
j
j
j
GE
GE
GE
GE
CC
GE
GE
Gon
= 300A; V
= 300A; T
= 25(125)
=300A; V
= 125
= 125
= V
= 0; V
= 15V, T
= 0, V
= 600V, I
= ± 15V
= V
= R
CE
o
o
Goff
C
C
, I
CE
CE
GE
under following conditions:
C
o
j
GE
=3.3 , T
C
j
= 25(125)
= V
= 25V, f = 1MHz
C
= 12mA
= 25(125)
= 15V; chip level
= 0V; T
= 300A
CES
; T
C
= 25(125)
j
Conditions
j
j
o
= 125
= 25
= 25(125)
C
o
C
NPT IGBT Modules
o
SID400N12
o
C
C
o
C
o
C
min.
4.8
T
3
C
= 25
0.35(0.5)
85(140)
1.4(1.6)
2.5(3.1)
o
38(40)
3.66(5) 4.66(6.33)
13(40)
2(1.8)
C , unless otherwise specified
1.2
typ.
3.3
200
115
720
22
5.5
0.1
2.5
80
1.6(1.8)
3(3.7)
max.
0.05
0.125
0.038
1.6
325
6.45
0.3
400
220
100
2.5
1.2
3.5
30
20
4
900
5
Units
K/W
K/W
K/W
mA
m
m
Nm
Nm
nH
m
mJ
uC
mJ
nF
ns
ns
ns
ns
V
V
V
V
V
A
g