upd16835 Renesas Electronics Corporation., upd16835 Datasheet

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upd16835

Manufacturer Part Number
upd16835
Description
Monolithic Quad H Bridge Driver Circuit
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No.
Date Published
Printed in Japan
DESCRIPTION
circuit. Because it uses MOS FETs in its output stage, this driver IC consumes less power than conventional driver
ICs that use bipolar transistors.
pins reduced. As a result, the performance of the application set can be improved and the size of the set has been
reduced.
vibration.
FEATURES
ORDERING INFORMATION
The PD16835 is a monolithic quad H bridge driver IC that employs a CMOS control circuit and a MOS FET output
Because the PD16835 controls a motor by inputting serial data, its package has been shrunk and the number of
The PD16835 employs a current-controlled 64-step micro step driving method that drives stepper motor with low
The PD16835 is housed in a 38-pin plastic shrink SOP to contribute to the miniaturization of the application set.
The PD16835 can simultaneously drive two stepper motors and is ideal for the mechanisms of camcorders.
Data is input with the LSB first.
EVR reference setting voltage: 100 to 250 mV (@V
Chopping frequency: 32 to 124 kHz ... 5-bit data input (4-kHz step)
Original oscillation division or internal oscillation selectable
Number of pulses in 1 V
Step cycle: 0.25 to 8191.75 s ... 15-bit data input (0.25- s step)
Four H bridge circuits employing power MOS FETs
Current-controlled 64-step micro step driving
Motor control by serial data (8 bytes x 8 bits) (original oscillation: 4-MHz input)
3-V power supply. Minimum operating voltage: 2.7 V (MIN.)
Low current consumption I
38-pin plastic shrink SOP (7.62 mm (300))
Part number
G11594EJ2V0DS00 (2nd edition)
October 2000 NS CP(K)
PD16835G3
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT
D
: 0 to 252 pulses ... 6 bits + 2-bit data input (4 pulses/step)
DD
: 3.0 mA (MAX.), I
38-pin plastic shrink SOP (7.62 mm (300))
The mark
DATA SHEET
DD (RESET)
shows major revised points.
Package
REF
= 250 mV) ... 4-bit data input (10-mV step)
: 100 A (MAX.), I
MOS INTEGRATED CIRCUIT
MO(RESET)
: 1.0 A (MAX.)
PD16835
©
1998

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upd16835 Summary of contents

Page 1

MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT DESCRIPTION The PD16835 is a monolithic quad H bridge driver IC that employs a CMOS control circuit and a MOS FET output circuit. Because it uses MOS FETs in its output stage, this driver ...

Page 2

OSC OSC OUT D REF RESET 1 SELECTOR OSC OSC + – + FILTER ...

Page 3

PIN CONFIGURATION 38-pin plastic shrink SOP (7.62 mm (300 LGND RESET OSC 37 OSC OUT 3 FIL OSC FIL SCLK 35 B ...

Page 4

PIN FUNCTIONS Pin No. Symbol 1 LGND Control circuit GND pin 2 C Chopping capacitor connection pin OSC 3 FIL 1-ch filter capacitor connection pin (1000 pF TYP FIL 2-ch filter capacitor connection pin (1000 pF TYP.) ...

Page 5

I/O PIN EQUIVALENT CIRCUIT Pin Name Equivalent Circuit LATCH Pad SDATA SCLK V DD Pad OSC OUT EXT EXT V DD Pad V REF ...

Page 6

CPU 4 MHz OSC OSC IN RESET 3 REGULATOR 1 SELECTOR OSC BATTERY 4 – LGND PGND H BRIDGE FB A ...

Page 7

STANDARD CHARACTERISTICS CURVES P vs. T Characteristics T A 1.4 1.2 1.0 125 C/W 0.8 0.6 0.4 0.2 0 – 100 Ambient Temperature vs. V Characteristics ...

Page 8

V Characteristics OSC DD 150 100 pF, OSC DATA: all high 140 130 120 110 100 Control Circuit Supply Voltage V ( vs. V ...

Page 9

INTERFACE (I/F) CIRCUIT DATA CONFIGURATION (f Input data consists of serial data (8 bytes x 8 bits). Input serial data with the LSB first, from the 1st byte to 8th byte. (1) Initial data <1st byte> Bit Data Function ...

Page 10

Bit Data Function OSCSEL 5-bit data Chopping D2 input Frequency D1 D0 Note The frequency is 0 kHz input. <5th byte> ...

Page 11

Bit Data Function D7 D6 4-bit data ch current setting 2 input D5 Current Set2 EVR: 100 to 250 mV Setting ( 4-bit data ch current setting 1 input Current Set1 D1 EVR: ...

Page 12

Data Configuration Data can be input in either of two ways. Initial data can be input when the power is first applied, or standard data can be input during normal operation. Input serial data with the LSB first, i.e., starting ...

Page 13

The 2nd byte specifies the delay between data being read and data being output. This delay is called the start up wait time, and the motor can be driven from that point at which the start up wait ...

Page 14

Bit Data Bit Data Bit Data Bit Data Bit D7 D6 ...

Page 15

Remark The meanings of the symbols listed in Table 5-4 are as follows: ENABLE : Output setting (H : Conducts Stops) ROTATION : Rotation direction (H : Reverse (CCW Forward (CW)) PULSEOUT : Output pulse signal ...

Page 16

Table 5-6. 7th Byte Data Configuration (Initial data) Bit D7 D6 Data Remark Bits Reference voltage 2 (EVR Bits Reference voltage 1 (EVR <8th byte> The ...

Page 17

Table 5-8. 2nd Byte Data Configuration (Standard data) Bit D7 Data Rotation direction <3rd and 4th bytes> The 3rd and 4th bytes select the pulse cycle of the the initial mode used (CURRENT SET ...

Page 18

Table 5-11. 5th Byte Data Configuration (Standard data) Bit D7 Data Rotation direction <6th and 7th bytes> The 6th and 7th bytes select the pulse cycle of the initial mode used (CURRENT SET ). ...

Page 19

Update Timing) The standard data (pulse width, number of pulses, rotation direction, current setting, and ENABLE) of this product are set and updated at the following latch timing. ENABLE change Pulse width Number of pulses Rotation direction Current setting ...

Page 20

Pulse width Internal data retained. Output reset Rotation direction Internal output retained Number of pulses Internal data retained. Output reset Current setting Internal output retained ENABLE Internal output retained The initial mode of this product is as follows. The ...

Page 21

Cautions on Correct Use (1) With this product, input the data for start up wait and start up drive wait. Because the standard data are set or updated by these wait times, if the start up wait time and start ...

Page 22

ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings (T = 25°C) A Parameter Supply voltage Input voltage V IN Reference voltage V REF Note 1 H bridge drive current I M(DC) Instantaneous H bridge drive I M(pulse) Note ...

Page 23

(VD-LATCH) LATCH SCLK t (SCLK-LATCH) Ignored because LATCH level. 50% LATCH SDATA D1 D2 50% 50% SCLK (SCLK-LATCH) setup hold Data Sheet G11594EJ2V0DS00 64 clocks (8 bits x 8 bytes) t ...

Page 24

ELECTRICAL CHARACTERISTICS DC Characteristics (Unless otherwise specified pF, C OSC FIL Parameter Symbol Off V pin current I M MO(RESET) V pin current pin current I DD DD(RESET) High level input voltage ...

Page 25

Initialization RESET V D LATCH Initial Standard DATA I S Dummy data 1 1 EXP: 1 EXP : 0 ENABLE: 0 OSC OUT (original oscillation) Input at rising Output by Start point wait edge of RESET I1 data (FF1) Start ...

Page 26

TIMING CHART (2) CLK (PULSE OUT) MOB (CW mode) H bridge , 1ch output status Current direction: A1 Current direction bridge , 2ch output status (Expanded view) Note1 CW mode CLK PULSE OUT Position No ...

Page 27

RELATION BETWEEN ROTATION ANGLE, PHASE CURRENT, AND VECTOR QUANTITY (64-DIVISION MICRO STEP) (Values of PD16835 for reference) Step Rotation angle ( ) MIN 5.6 2.5 2 11.3 12.4 3 16.9 22.1 4 22.5 31.3 5 28.1 40.1 ...

Page 28

PACKAGE DRAWING 38 PIN PLASTIC SHRINK SOP (300 mil NOTE 1. Controlling dimension 2. Each lead centerline is located within 0.10 mm (0.004 inch) of its true ...

Page 29

RECOMMENDED SOLDERING CONDITIONS When soldering this product highly recommended to observe the conditions as shown below. If other soldering processes are used the soldering is performed under different conditions, please make sure to consult with ...

Page 30

Data Sheet G11594EJ2V0DS00 PD16835 ...

Page 31

NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation ...

Page 32

The information in this document is current as of October, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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