2sj567 TOSHIBA Semiconductor CORPORATION, 2sj567 Datasheet

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2sj567

Manufacturer Part Number
2sj567
Description
Toshiba Field Effect Transistor Silicon P-channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Switching Applications
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement model: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
R
temperature
Characteristic
DD
G
Characteristic
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
= 25 Ω
= −50 V, Tch = 25°C (initial), L = −25.2 mH, I
GS
DC
Pulse
= 20 kΩ)
DSS
th
(Note 2)
= −1.5 ~ −3.5 V (V
(Note 1)
(Note 1)
= −100 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
DGR
GSS
P
DSS
I
DP
AR
| = 2.0 S (typ.)
AS
AR
stg
D
ch
R
R
D
Symbol
th (ch-a)
th (ch-c)
2SJ567
= 1.6 Ω (typ.)
DS
DS
= −10 V, I
= −200 V)
−55~150
Rating
−200
−200
−2.5
97.5
−2.5
±20
−10
150
2.0
20
1
Max
6.25
125
AR
D
= −1 mA)
= −2.5 A
Unit
mJ
mJ
°C/W
°C/W
°C
°C
W
Unit
V
V
V
A
A
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2-7B1B
2-7J1B
SC-64
SC-64
2006-11-16
2SJ567
Unit: mm

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2sj567 Summary of contents

Page 1

... 97 −2 2 150 °C ch −55~150 T °C stg Symbol Max Unit R 6.25 °C/W th (ch-c) R 125 °C/W th (ch-a) = −2 2SJ567 Unit: mm JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) JEDEC ― JEITA SC-64 TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 2006-11-16 ...

Page 2

... ⎯ ⎯ 85 ⎯ ⎯ 10 ⎯ ⎯ 6 ⎯ ⎯ 4 Min Typ. Max ⎯ ⎯ −2.5 ⎯ ⎯ − ⎯ ⎯ 2 ⎯ ⎯ 135 ⎯ ⎯ 0.81 2006-11-16 2SJ567 Unit μA μ Ω Unit μC ...

Page 3

... Drain-source voltage V −10 −8 −6 −4 −2 0 −10 −4 0 Gate-source voltage V 10 Common source Tc = 25°C Pulse test 1 0.1 −10 −0.1 3 2SJ567 I – Common source − 25°C Pulse test −8 −5.75 −5.5 −5.25 −5 −4.8 −4.6 −4.4 −4 −4 V −20 − ...

Page 4

... Drain-source voltage iss oss 2 C rss 1 0 −80 −40 −100 Dynamic input/output characteristics V DS −160 −120 −80 −40 0 160 0 4 2SJ567 I – −3 − 0.4 0.6 0 – Common source Pulse test 0 40 ...

Page 5

... Pulse width t (S) w 100 100 μ −100 −300 ( −15 V Test circuit = 25 Ω − 25 2SJ567 Duty = t (ch-c) = 6.25°C/W 10 100 E – 100 125 150 Channel temperature T ch (°C) B VDSS ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SJ567 20070701-EN 2006-11-16 ...

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