2sj567 TOSHIBA Semiconductor CORPORATION, 2sj567 Datasheet - Page 5

• Manufacturer Part Number: 2sj567
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−0.005
−0.05
−0.03
−0.01
−0.5
−0.3
−0.1
−30
−10
−5
−3
−1
−0.1
* Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
I D max (pulse) *
Tc = 25°C
−0.3
Drain-source voltage V
0.005
0.003
0.001
−1
0.05
0.03
0.01
Safe operating area
0.5
0.3
0.1
10 μ
3
1
Duty = 0.5
−3
0.05
0.02
0.2
0.1
−10
100 μ
operation
0.01
DC
1 ms*
DS
−30
V DSS max
(V)
Single pulse
−100
1 m
100 μs*
−300
Pulse width t
10 m
r
th
5
– t
R
V
w
G
DD
100 m
w
= 25 Ω
= −50 V, L = 25.2 mH
(S)
100
−15 V
80
60
40
20
0
15 V
25
Test circuit
1
P DM
Duty = t/T
R th (ch-c) = 6.25°C/W
Channel temperature T ch (°C)
50
t
10
75
T
E
AS
Ε AS
– T
V
DD
=
ch
100
B
1
2
Waveform
VDSS
100
I
⋅
AR
L
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
B VDSS
V
DS
B VDSS
2006-11-16
2SJ567
150
−
V DD
⎞
⎟
⎟
⎠