si4916dy

Manufacturer Part Numbersi4916dy
DescriptionDual N-channel 30-v Mosfet With Schottky Diode
ManufacturerVishay
si4916dy datasheet
 
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Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
(V)
r
(Ω)
DS
DS(on)
0.018 at V
= 10 V
GS
Channel-1
0.023 at V
= 4.5 V
GS
30
0.018 at V
= 10 V
GS
Channel-2
0.022 at V
= 4.5 V
GS
SCHOTTKY PRODUCT SUMMARY
V
(V)
SD
V
(V)
DS
Diode Forward Voltage
30
0.50 V at 1.0 A
SO-8
D
1
1
D
2
1
G
3
2
S
4
2
T op V i e w
Ordering Information: Si4916DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
a,b
Continuous Drain Current (T
= 150 °C)
J
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
PulseD Source-Drain Current
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
a, b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Notes:
a. Based on T
= 25 °C.
C
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 sec.
Document Number: 74331
S-62450-Rev. A, 27-Nov-06
New Product
FEATURES
• LITTLE FOOT
a
Q
(Typ)
I
(A)
g
D
• 100 % R
10
6.6
8.5
APPLICATIONS
10.5
• DC/DC Converters
8.9
9.3
- Notebook
I
(A)
F
2.0
G
1
N-Channel 1
G
8
1
MOSFET
S
/D
7
1
2
S
/D
6
1
2
S
/D
5
G
1
2
2
N-Channel 2
MOSFET
= 25 °C, unless otherwise noted
A
Symbol
V
DS
V
GS
T
= 25 °C
C
T
= 70 °C
C
I
D
T
= 25 °C
A
T
= 70 °C
A
I
DM
T
= 25 °C
C
I
S
T
= 25 °C
A
I
SM
I
AS
L = 0.1 mH
E
AS
T
= 25 °C
C
T
= 70 °C
C
P
D
T
= 25 °C
A
T
= 70 °C
A
T
, T
J
stg
Si4916DY
Vishay Siliconix
®
Plus Integrated Schottky
Tested
g
D
1
S
/D
1
2
Schottky Diode
S
2
Channel-1
Channel-2
30
20
10
10.5
8
8.3
a, b, c
a, b, c
7.5
7.8
a ,b, c
a, b, c
6
6.3
40
40
3
3.2
a, b, c
a, b, c
1.7
1.8
40
40
15
11.2
3.3
3.5
2.1
2.2
a, b, c
a, b, c
1.9
2.0
a, b, c
a, b, c
1.2
1.3
- 55 to 150
www.vishay.com
RoHS
COMPLIANT
Unit
V
A
mJ
W
°C
1

si4916dy Summary of contents

  • Page 1

    ... Ordering Information: Si4916DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a,b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current PulseD Source-Drain Current Single-Pulse Avalanche Current ...

  • Page 2

    ... Si4916DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. Maximum under Steady State conditions is 112 °C/W for Channel 1 and 107 °C/W for Channel 2. MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage ...

  • Page 3

    ... J Test Conditions 125 ° 100 ° 125 ° Si4916DY Vishay Siliconix a Min Max Unit Typ Ch-1 ...

  • Page 4

    ... Si4916DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.00 0.30 0.60 V – Drain-to-Source Voltage (V) DS Output Characteristics 0.025 0.022 0.019 0.016 V 0.013 0.010 – Drain Current (A) D On-Resistance vs. Drain Current 7.5 A ...

  • Page 5

    ... D(on) Limited °C C 0.1 Single Pulse BV Limited DSS 0.01 0 – Drain-to-Source Voltage ( > minimum V at which Safe Operating Area Si4916DY Vishay Siliconix 0.05 0. 0.02 0.01 0. – Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 120 100 ...

  • Page 6

    ... Si4916DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) ...

  • Page 7

    ... Total Gate Charge (nC) g Gate Charge Document Number: 74331 S-62450-Rev. A, 27-Nov- thru 0.9 1.2 1.5 1400 1120 6.6 8.8 11.0 Si4916DY Vishay Siliconix 125 ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS Transfer Characteristics C ...

  • Page 8

    ... Si4916DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage – Temperature (°C) J Reverse Current vs. Junction Temperature www ...

  • Page 9

    ... Document Number: 74331 S-62450-Rev. A, 27-Nov- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4916DY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

  • Page 10

    ... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...