si4916dy Vishay, si4916dy Datasheet - Page 8

• Manufacturer Part Number: si4916dy
• Description: Dual N-channel 30-v Mosfet With Schottky Diode
• Manufacturer: Vishay

Si4916DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
10
10
10
10
10
0.1
10
- 1
- 2
- 3
- 4
- 5
40
10
1
1
0.0
0
30 V
Reverse Current vs. Junction Temperature
0.2
25
Source-Drain Diode Forward Voltage
V
SD
T
0.4
J
– Source-to-Drain Voltage (V)
= 150 °C
24 V
50
T
J
– Temperature (°C)
0.6
75
0.8
T
J
= 25 °C
100
1.0
0.01
100
0.1
10
1
0.1
125
1.2
*V
*r
Limited
I
DS(on)
GS
D(on)
Single Pulse
T
150
1.4
C
>
V
= 25 °C
minimum V
Limited
DS
–
Safe Operating Area
Drain-to-Source Voltage (V)
1
GS
BV
at which r
DSS
Limited
0.05
0.04
0.03
0.02
0.01
0.00
DS(on)
100
80
60
40
20
10
0
0.001
0
is specified
I
DM
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Limited
1 ms
10 ms
100 ms
1 s
10 s
dc
2
V
0.01
GS
100
– Gate-to-Source Voltage (V)
Time (sec)
4
I
0.1
D
= 7.8 A
S-62450-Rev. A, 27-Nov-06
Document Number: 74331
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