2sk2325 Panasonic Corporation of North America, 2sk2325 Datasheet - Page 2

• Manufacturer Part Number: 2sk2325
• Description: Silicon N-channel Power F-mos Fet
• Manufacturer: Panasonic Corporation of North America

Power F-MOS FETs
2
0.3
0.1
10
3
1
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0
Drain to source voltage V
Drain to source voltage V
Area of safe operation (ASO)
0
I
I
DP
D
10
1
Drain current I
5
1ms
R
T
I
10ms
DS(on)
2
30
C
D
10
=125˚C
100ms
85˚C
3
Non repetitive pulse
T
V
C
25˚C
100
0˚C
=25˚C
15
DS
DC
I
D
4
D
t=100 s
300
T
( A )
40W
20
V
C
DS
DS
=25˚C
GS
5
5.5V
4.5V
4V
=10V
5V
( V )
( V )
1000
25
6
50
40
30
20
10
0
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
0
0
0
Gate to source voltage V
T
Ambient temperature Ta ( ˚C )
C
=125˚C
20
85˚C
2
1
Drain current I
40
| Y
I
P
4
2
D
60
D
fs
(2)
(1)
(1) T
(2) Without heat sink
|
80 100 120 140 160
6
3
V
(P
0˚C
25˚C
Ta
C
GS
D
=Ta
I
=2W)
D
D
8
4
125˚C
85˚C
V
( A )
DS
V
T
GS
C
DS
10
=25V
5
=0˚C
25˚C
=25V
( V )
12
6
1000
300
100
0.3
0.1
10
35
30
25
20
15
10
30
10
3
1
5
0
0
0
Gate to source voltage V
Drain to source voltage V
0.1
C
5
iss
20
IAS
, C
V
0.3
L-load ( mH )
10
oss
DS
40
, C
15
L-load
rss
1
V
60
2SK2325
GS
20
C
V
C
C
22.5mJ
T
T
f=1MHz
T
rss
3
C
iss
oss
C
80
DS
C
=25˚C
GS
DS
=25˚C
25
=25˚C
I
D
=3A
( V )
( V )
2A
1A
100
10
30