2sk3510 Renesas Electronics Corporation., 2sk3510 Datasheet - Page 2

• Manufacturer Part Number: 2sk3510
• Description: Switching N-channel Power Mosfet
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
2
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
= 20
PG.
CHARACTERISTICS
0 V
PG.
I
G
V
= 2 mA
50
R
DD
G
D.U.T.
= 25
I
D
50
I
AS
D.U.T.
BV
DSS
Starting T
R
V
L
DD
V
DS
L
V
DD
ch
SYMBOL
V
R
V
| y
t
t
I
C
Q
Q
I
C
C
GS(off)
DS(on)
Q
A
d(on)
d(off)
F(S-D)
Q
DSS
GSS
t
t
t
oss
fs
iss
rss
GS
GD
rr
r
f
G
rr
= 25°C)
|
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/ s
V
0
Data Sheet D15687EJ1V0DS
D
F
F
DS
GS
DS
DS
GS
DS
GS
DD
GS
G
DD
GS
GS
= 83 A, V
= 83 A, V
Duty Cycle
= 83 A
= 0
= 1 s
= 75 V, V
= 10 V, I
= 10 V, I
= 10 V
= 20 V, V
= 10 V, I
= 0 V
= 38 V, I
= 10 V
= 60 V
= 10 V
TEST CIRCUIT 2 SWITCHING TIME
PG.
TEST CONDITIONS
GS
GS
D
D
D
D
GS
= 1 mA
= 42 A
= 42 A
= 42 A
= 0 V
= 0 V
1%
DS
= 0 V
R
= 0 V
G
D.U.T.
R
V
L
DD
V
Wave Form
V
Wave Form
GS
DS
MIN.
2.0
30
V
V
V
GS
DS
0
DS
0
10%
TYP.
8500
1300
t
650
105
150
240
d(on)
3.0
6.5
1.0
60
35
28
16
30
52
80
90%
t
on
10% 10%
t
MAX.
r
4.0
8.5
10
10
V
t
GS
d(off)
2SK3510
UNIT
t
m
off
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
90%
V
S
V
A
A
90%
t
f