t431616a TM Technology Inc., t431616a Datasheet - Page 5

• Manufacturer Part Number: t431616a
• Description: 1m X 16 Sdram - Taiwan Memory Technology
• Manufacturer: TM Technology Inc.

ABSOLUTE MAXIMUM RATINGS
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
RECOMMENDED DC OPERATING CONDITIONS
(T
Note : 1. V
CAPACITANCE
(T
Taiwan Memory Technology, Inc. reserves the right P. 5
to change products or specifications without notice.
tm
Parameter
Voltage on Any Pin Relative To Vss
Supply Voltage Relative To Vss
Short circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
RAS,CAS,WE,CS,CKE,LDQM,
Output logic high voltage
Output logic low voltage
A
A
Output leakage current
Input leakage current
=25
= -5 to +70 GC / -40 to +85 GC , Voltage referenced to V
Input High Voltage
Input Low Voltage
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
4. Dout = disable, 0V
2. V
3. Any input 0V
Supply Voltage
Parameter
GC
IL
IH
DQ0 ~ DQ15
,V
ADDRESS
CH
(min) = -1.0V AC for pulse width
TE
(max) = 4.6V AC for pulse width
CLOCK
UDQM
DD
Pin
=3.3V, f = 1MHz)
@
V
IN
@
@
V
V
Symbol
DD
V
OUT
V
V
V
V
DD
I
I
,V
OL
OH
IL
OL
IH
IL
@
+ 0.3V , all other pin are not under test = 0V.
DDQ
V
DD .
Symbol
C
C
C
C
ADD
OUT
CLK
IN
Min.
@
@
-0.3
3.0
2.0
2.4
-5
-5
-
V
10ns acceptable.
10ns acceptable.
V
Symbol
DD
T OPR
IN
I out
T stg
P
,V
,V
D
OUT
DDQ
Typ
3.3
3.0
0
-
-
-
-
Min
2.5
2.5
4.0
2.5
-5 to +70 / -40 to +85
SS
=0V)
-55 to +125
V
-1.0 to 4.6
-1.0 to 4.6
DD
Value
Max.
3.6
0.8
0.4
50
+0.3V
5
5
-
1
Publication Date: DEC. 2000
Max
4.0
5.0
6.5
5.0
Unit
uA
uA
V
V
V
V
V
T431616A
Unit
Revision: C
I
mA
I
GC
GC
W
OH
Unit
V
V
OL
pF
pF
pF
pF
Notes
=-2mA
=2mA
1
2
3
4