t431616a TM Technology Inc., t431616a Datasheet - Page 6

• Manufacturer Part Number: t431616a
• Description: 1m X 16 Sdram - Taiwan Memory Technology
• Manufacturer: TM Technology Inc.

DC CHARACTERISTICS
T
Note:
Taiwan Memory Technology, Inc. reserves the right P. 6
to change products or specifications without notice.
tm
Operating Current
( One Bank Active)
Precharge Standby
Current in power-
down mode
Precharge Standby
Current in non
power-down mode
Active Standby
Current in power-
down mode
Active Standby
Current in non
power-down mode
(One Bank Active) I
Operating Current
(Burst Mode)
Refresh Current
Self refresh
Current
A
= -5 to 70
Parameter
1. Measured with output open. Addresses are changed only one time during
2. Refresh period is 32ms. Addresses are changed only one time during
3.
t
t
t
CH
CC
RC
CCD
TE
GC
: Clock cycle time.
: Row cycle time.
/ -40 to +85
: Column address to column address delay time.
I
I
I
I
I
I
I
I
I
I
I
Symbol
CC1
CC2
CC2
CC2
CC2
CC3
CC3
CC3
CC3
CC4
CC5
CC6
P
PS
N
NS
P
PS
N
NS
160
180
180
180
GC
-6
, V
Speed version
IH
150
170
170
170
-7
(min)/V
30
10
10
40
10
2
2
2
1
140
160
160
160
-8
IL
(max)=2.0V/0.8V
120
140
140
140
-10
Unit
mA
mA
mA
mA
mA
mA
mA t
mA
Burst Length = 1
t
CKE
CKE
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
CKE
CKE
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
CAS Latency 3
CAS Latency 2
CKE
RC
RC
J
J
J
J
J
t
@
@
@
@
@
J
t
RC
V
V
V
RC
0.2V
V
IH
IH
IH
V
V
VIL(max),
V
(min) ,
IH
(min)
IL
IL
IL
(min),CLK
(min),
(min),CLK
(min),
(max),
(max),CLK
(max),CLK
Test Condition
t
CC
CS
Publication Date: DEC. 2000
t
t
CS
J
CC
CC
I
All Band Activated
t
t
J
OL
CC
@
@
CCD
=15ns
=15ns
J
V
V
V
=0 mA,Page Burst
@
@
IH
(min),I
V
IL
IL
=
IH
V
V
(min),
(min),
(min),
t
IL
IL
t
(min),
CCD
CC
(max),
(max),
OL
t
(min)
T431616A
CC
(min)
t
t
= 0 mA
t
CC
CC
t
CC
CC
=15ns
t
t
=•
=•
CC
(min)
CC
=15ns
Revision: C
.
=•
=•
.
1,3
3
3
3
3
1,3
2,3
Note