tpd4113k TOSHIBA Semiconductor CORPORATION, tpd4113k Datasheet - Page 8

• Manufacturer Part Number: tpd4113k
• Description: Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Operating power supply voltage
Current dissipation
Input voltage
Input current
Output saturation voltage
FRD forward voltage
Regulator voltage
BSD forward voltage
Current limiting voltage
Current limiting dead time
Thermal shutdown temperature
Thermal shutdown hysteresis
V
V
V
V
DIAG saturation voltage
Output-on delay time
Output-off delay time
Dead time
FRD reverse recovery time
CC
CC
BS
BS
under-voltage protection
under-voltage protection recovery
under-voltage protection
under-voltage protection recovery
Characteristics
(Ta = 25°C)
V
I
V
V
V
V
V
V
I
V
BS (OFF)
Symbol
BS (ON)
F
CC
CC
V
ΔTSD
BS
BS
DIAGsat
CEsat
tdead
CEsat
TSD
V
V
V
V
I
I
V
V
V
I
REG
(BSD)
t
t
I
Dt
BB
CC
t
CC
IH
F
on
off
BB
IL
F
rr
IH
UVD
UVR
UVD
UVR
IL
R
H
L
H
L
V
V
V
V
V
V
V
V
V
V
IF = 0.5 A, high side
IF = 0.5 A, low side
IF = 500μＡ
V
V
V
I
V
V
V
V
DIAG
BB
CC
BS
BS
IN
IN
IN
IN
CC
CC
CC
CC
CC
BB
BB
BB
BB
= “H”
= “L”
= 5Ｖ
= 0 V
= 450 V
= 15 V, high side ON
= 15 V, high side OFF
= 280 V, IC = 0.5 A
= 280 V, IC = 0.5 A
= 280 V, IC = 0.5 A
= 280 V, IC = 0.5 A
= 15 V
= 15 V, IC = 0.5 A
= 15 V, IC = 0.5 A
= 15 V, I
= 15 V
= 15 V
=5mA
8
Test Condition
O
= 30 mA
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
13.5
0.46
10.5
135
Min
3.5
6.5
2.3
8.5
1.4
50
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
TPD4113K
Typ.
11.5
280
260
230
200
1.1
2.4
2.4
1.6
1.6
0.9
0.5
3.3
9.5
1.5
1.2
15
⎯
⎯
⎯
⎯
⎯
⎯
50
11
⎯
⎯
7
9
2006-11-01
Max
16.5
0.54
12.5
10.5
450
410
370
150
100
185
0.5
1.5
2.0
2.0
1.2
7.5
4.4
9.5
0.5
12
⎯
⎯
⎯
⎯
5
3
3
3
3
Unit
mA
μs
μA
μA
℃
℃
μs
μs
μs
ns
V
V
V
V
V
V
V
V
V
V
V
V