s9012t SeCoS Halbleitertechnologie GmbH, s9012t Datasheet - Page 2

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s9012t

Manufacturer Part Number
s9012t
Description
Pnp Epitaxial Silicon Transistor
Manufacturer
SeCoS Halbleitertechnologie GmbH
Datasheet
01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com
Typical Characteristics
Elektronische Bauelemente
-1000
Figure 3. Base-Emitter Saturation Voltage
-50
-40
-30
-20
-10
-100
-0
-10
-0
-10
Collector-Emitter Saturation Voltage
Figure 1. Static Characteristic
V
CE
-10
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
-20
I
B
=-300
-100
μ
I
V
B
A
=-250
BE
(sat)
-30
I
B
μ
V
=-200
A
CE
(sat)
μ
I
B
A
=-150
-40
I
I
B
B
=-100
=-50
μ
I
C
A
=10I
μ
μ
A
A
B
-1000
-50
Figure 4. Current Gain Bandwidth Product
1000
1000
100
100
10
10
1
-10
-1
PNP Epitaxial Silicon Transistor
Figure 2. DC current Gain
I
I
C
C
-10
[mA], COLLECTOR CURRENT
[mA], COLLECTOR CURRENT
Any changing of specification will not be informed individual
S9012T
-100
-100
-1000
V
CE
V
CE
= -1V
=-6V
-10000
-1000
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