upc8218t5a

Manufacturer Part Numberupc8218t5a
DescriptionSilicon Rf Power Amplifier Ic For 1.9 Ghz Phs
ManufacturerRenesas Electronics Corporation.
upc8218t5a datasheet
 


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SILICON RF POWER AMPLIFIER IC FOR 1.9 GHz PHS
DESCRIPTION
µ
The
PC8218T5A is a silicon monolithic integrated circuit designed for use as power amplifier 1.9 GHz PHS. This
IC consists of three stage amplifiers as driver stage and final stage of power amplifier.
This device is packaged in surface mount 16-pin TSON (Thin Small Outline Non-leaded) plastic package.
FEATURES
• Output Power
• Operation Current
• Single Supply Voltage
• Suitable for High-density Surface Mounting : 16-pin Plastic TSON package (3.3 × 2.3 × 0.6 mm)
APPLICATION
• 1.9 GHz applications (Example : PHS etc.)
ORDERING INFORMATION
Part Number
Package
µ
PC8218T5A-E1 16-pin Plastic TSON
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order:
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10480EJ01V0DS (1st edition)
Date Published November 2004 CP(K)
Printed in Japan
DATA SHEET
Si ANALOG INTEGRATED CIRCUIT
µ
= −19 dBm, f = 1.9 GHz
: P
= +20.5 dBm MIN. @ P
out
in
: I
= 150 mA TYP.
op
: V
= 3.0 V TYP.
DS
Marking
Supplying Form
8218
• Embossed tape 12 mm wide
• Pin 8, 9 face the perforation side of the tape
• Qty 3 kpcs/reel
µ
PC8218T5A
PC8218T5A
NEC Compound Semiconductor Devices, Ltd. 2004

upc8218t5a Summary of contents

  • Page 1

    SILICON RF POWER AMPLIFIER IC FOR 1.9 GHz PHS DESCRIPTION µ The PC8218T5A is a silicon monolithic integrated circuit designed for use as power amplifier 1.9 GHz PHS. This IC consists of three stage amplifiers as driver stage and final ...

  • Page 2

    PIN CONNECTIONS (Top View 8218 34099 (Bottom View INTERNAL BLOCK DIAGRAM ...

  • Page 3

    ABSOLUTE MAXIMUM RATINGS (T Parameter Symbol Operating Ambient Temperature T Storage Temperature T Channel Temperature T Power Dissipation of Package P Driver Part (Q1) Supply Voltage V Circuit Current I CC Maximum Input Power P 2 Stage PA Part (Q2+Q3) ...

  • Page 4

    ELECTRICAL CHARACTERISTICS (f = 1.9 GHz, V specified, using our standard test fixture) Parameter Symbol All Part (Driver Part + 2 Stage PA Part, Q1+Q2+Q3) Gate Voltage Adjusted Range V η Power Added Efficiency Operation Current Consumption Input Return Loss ...

  • Page 5

    ELECTRICAL CHARACTERISTICS (f = 1.9 GHz, V specified, using our standard test fixture) Parameter Symbol 2 Stage PA Part (Q2+Q3) Gate Bias Voltage V η Power Added Efficiency Drain Current I DS Input Return Loss RL Output Return Loss RL ...

  • Page 6

    TEST CIRCUIT V CC µ 0 000 100 pF 100 nH 4.7 nH µ 0.1 F 5.1 Ω µ 0 Remark Back Surface on GND 3.3 ...

  • Page 7

    TYPICAL CHARACTERISTICS (f = 1.9 GHz, V OUTPUT POWER, ADJACENT CHANNEL POWER vs. INPUT POWER out –5 –30 –25 –20 –15 Input Power P (dBm) in ADJACENT ...

  • Page 8

    FREQUENCY BAND WIDTH ∆ ATTEN 30 dB MKR –43. 20.0 dBm 10 dB/ 1.928 GHz CENTER 3.250 GHz SPAN 6.500 GHz *RBW 30 kHz *VBW 30 kHz *SWP 19.0 sec Remark The graph indicates nominal characteristics ...

  • Page 9

    PACKAGE DIMENSIONS 16-PIN PLASTIC TSON (UNIT: mm) 3.5±0.15 3.3±0 0.16±0.05 Remark ( ) : Reference value 0.4±0.05 (Bottom View) (0.55) (2.2) Data Sheet PU10480EJ01V0DS µ PC8218T5A 9 ...

  • Page 10

    NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with ...

  • Page 11

    The information in this document is current as of November, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date ...

  • Page 12

    For further information, please contact NEC Compound Semiconductor Devices, Ltd. E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office ...