ap0903gm APEC, ap0903gm Datasheet

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ap0903gm

Manufacturer Part Number
ap0903gm
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
APEC
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AP0903GM
Quantity:
1 997
Part Number:
ap0903gm-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
Part Number:
ap0903gmA
Manufacturer:
ADVANCED
Quantity:
650
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
D
SO-8
D
D
D
S
S
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
3
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
13.3
10.7
+20
2.5
30
50
DS(ON)
DSS
G
Value
50
AP0903GM
8.5mΩ
D
S
200812122
13.3A
Units
℃/W
30V
Unit
W
V
V
A
A
A
1

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ap0903gm Summary of contents

Page 1

... J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter Parameter 3 AP0903GM RoHS-compliant Product BV 30V DSS R 8.5mΩ DS(ON) I 13. Rating Units 30 +20 13.3 10.7 50 2.5 -55 to 150 -55 to 150 ...

Page 2

... AP0903GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 =10V G 1.4 0.9 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 = 1.2 0.8 0.4 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP0903GM 150 7.0 V 6 =4. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 o ...

Page 4

... AP0903GM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

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