ap0903gm APEC, ap0903gm Datasheet - Page 4

• Manufacturer Part Number: ap0903gm
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

AP0903GM
0.01
100
0.1
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
Single Pulse
I
T
D
V
90%
10%
V
A
= 12 A
DS
GS
=25
2
V
o
DS
Q
C
0.1
V
t
G
, Drain-to-Source Voltage (V)
V
d(on)
DS
V
, Total Gate Charge (nC)
DS
= 15 V
4
DS
= 18 V
t
= 24 V
r
6
1
8
t
d(off)
10
t
f
10
100ms
100us
10ms
1ms
DC
1s
100
12
Fig 10. Effective Transient Thermal Impedance
0.001
0.01
800
600
400
200
0.1
0
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
V
Duty factor=0.5
0.01
0.02
0.1
0.05
Single Pulse
0.2
G
0.001
5
V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
13
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
21
10
=125
j
= P
t
o
C/W
f=1.0MHz
DM
T
x R
100
25
thja
+ T
C
C
C
Q
a
oss
iss
rss
1000
29
4