lh28f400su-nc Sharp Microelectronics of the Americas, lh28f400su-nc Datasheet - Page 27

• Manufacturer Part Number: lh28f400su-nc
• Description: 512k 256k Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

4M (512K × 8, 256K × 16) Flash Memory
AC Characteristics for WE
NOTES:
1. Read timing during write and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Write/Erase durations are measured to valid Status Register (CSR) Data.
5. Byte write operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of WE
SYMBO-
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHQV
WHQV
t
t
t
t
t
WLWH
WHWL
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
GHWL
WHRL
PHWL
WHGL
ELWL
V
AVAV
PHEL
RHPL
QVVL
L
CC
1
2
= 5.0 V ± 0.5 V, T
Write Cycle Time
V
RP
CE
Address Setup to WE Going High
Data Setup to WE Going High
WE Pulse Width
Data Hold from WE High
Address Hold from WE High
CE
WE Pulse Width High
Read Recovery before Write
WE High to RY
RP
Data and RY
RP
Write Recovery before Read
V
Data and RY
Duration of Byte Write Operation
Duration of Block Erase Operation
PP
PP
»
»
»
»
»
Setup to CE
Setup to WE Going Low
Hold from WE High
Hold from Valid Status Register
High Recovery to WE Going Low
Set up to WE Going High
Hold from Valid Status Register
PARAMETER
»
/ BY
»
/ BY
A
»
/ BY
= 0°C to +70°C
»
»
»
Going Low
High
High
»
Going Low
»
- Controlled Command Write Operations
»
for all Command Write operations.
TYP.
13
V
CC
MIN.
100
400
4.5
0.3
60
55
55
55
10
10
30
60
0
0
0
0
1
0
= 5.0 V ± 0.25 V V
MAX.
100
CC
MIN.
100
430
4.5
0.3
60
60
10
10
30
70
60
65
0
0
0
0
0
1
= 5.0 V ± 0.5 V
1
MAX.
100
LH28F400SU-NC
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
µs
ns
µs
s
NOTE
2, 6
2, 6
4, 5
3
3
2
2
4
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