m29dw128f-70za6t Numonyx, m29dw128f-70za6t Datasheet

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m29dw128f-70za6t

Manufacturer Part Number
m29dw128f-70za6t
Description
128 Mbit 16mb X8 Or 8mb X16, Multiple Bank, Page, Boot Block 3v Supply Flash Memory
Manufacturer
Numonyx
Datasheet
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block)
Feature summary
Supply voltage
– V
= 2.7V to 3.6V for Program, Erase and
CC
Read
– V
=12V for Fast Program (optional)
PP
Asynchronous Random/Page Read
– Page width: 8 Words
– Page access: 25, 30ns
– Random access: 60, 70ns
Programming time
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes Program
– 32-Word Write Buffer
Erase Verify
Memory blocks
– Quadruple Bank Memory Array:
16Mbit+48Mbit+48Mbit+16Mbit
– Parameter Blocks (at Top and Bottom)
Dual Operation
– While Program or Erase in one bank, Read
in any of the other banks
Program/Erase Suspend and Resume modes
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program
– Faster Production/Batch Programming
Common Flash Interface
– 64 bit Security Code
100,000 Program/Erase cycles per block
December 2007
M29DW128F
3V supply Flash memory
TSOP56 (NF)
14 x 20mm
BGA
TBGA64 (ZA)
10 x 13mm
Low power consumption
– Standby and Automatic Standby
Hardware Block Protection
– V
/WP Pin for fast program and write
PP
protect of the four outermost parameter
blocks
Security features
– Standard Protection
– Password Protection
Extended Memory Block
– Extra block used as security block or to
store additional information
Electronic Signature
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2220h + 2200h
®
ECOPACK
packages available
Rev 8
1/94
www.numonyx.com
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