r1lv0408d Renesas Electronics Corporation., r1lv0408d Datasheet - Page 12

• Manufacturer Part Number: r1lv0408d
• Description: 4m Sram 512-kword ?? 8-bit
• Manufacturer: Renesas Electronics Corporation.

R1LV0408D Series
Low V
(Ta = 0 to +70°C / −40 to +85°C)
V
Data
retention
current
Chip deselect to data retention time
Operation recovery time
Note:
Low V
Rev.1.00, May.24.2007, page 12 of 12
CC
0 V
V
2.2 V
V
2.7 V
CS#
for data retention
CC
DR
1. Typical values are at V
CC
CC
−5S%
−7L%
Data Retention Characteristics
Data Retention Timing Waveform (CS# Controlled)
Parameter
t
CDR
to +85°C
to +70°C
to +40°C
to +25°C
to +85°C
to +70°C
to +40°C
to +25°C
CC
= 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
Symbol Min Typ Max Unit
I
I
I
I
I
I
I
I
V
t
CCDR
CCDR
CCDR
CCDR
CCDR
CCDR
CCDR
CCDR
CDR
t
DR
R
Data retention mode
CS# ≥ V








2
0
5
CC
1*
1*









– 0.2 V
1
1
2.5
10
20
16
10
10



8
3
ms
µA
µA
µA
µA
µA
µA
µA
µA
ns
V
CS# ≥ V
V
CS# ≥ V
Average values
See retention waveform
CC
= 3.0 V, Vin ≥ 0 V
Test conditions
CC
CC
− 0.2 V, Vin ≥ 0 V
− 0.2 V
t
R