tb7101af TOSHIBA Semiconductor CORPORATION, tb7101af Datasheet

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tb7101af

Manufacturer Part Number
tb7101af
Description
Buck Dc-dc Converter Ic
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Buck DC-DC Converter IC
TB7101AF contains high-speed and low-on-resistance power
MOSFETs for the main switch and synchronous rectifier to
achieve high efficiency.
Features
Parts Marking
small overloads such as minor short-term overcurrent, or overheating. The protective functions do not necessarily
protect Product under all circumstances. When incorporating Product into your system, please design the system (1)
to avoid such overloads upon the Product, and (2) to shut down or otherwise relieve the Product of such overload
conditions immediately upon occurrence. For details, please refer to the notes appearing below in this document and
other documents referenced in this document.
The TB7101AF is a single-chip buck DC-DC converter IC. The
The product(s) in this document (“Product”) contain functions intended to protect the Product from temporary
Enables up to 1 A of load current (I
external components.
Fixed output voltage: V
A high 1-MHz oscillation frequency (typ.) allows the use of small external components.
Uses only an inductor and two capacitors to achieve high efficiency.
Allows the use of a small surface-mount ceramic capacitor as an output filter capacitor.
Enable threshold voltage : V
Housed in a small surface-mount package (PS-8) with a low thermal resistance.
Undervoltage lockout (UVLO), thermal shutdown (TSD) and overcurrent protection (OCP)
TB7101AF
(T5L1.2, F)
TB7101AF
(T5L1.5, F)
TB7101AF
(T5L1.8, F)
TB7101AF
(T5L2.5, F)
TB7101AF
(T5L3.3, F)
This product has a MOS structure and is sensitive to electrostatic discharge. Handle with care.
Product
*: The lot number consists of three digits. The first digit represents the last digit of the year of manufacture, and the
following two digits indicates the week of manufacture between 01 and either 52 or 53.
Voltage (V)
Output
1.2
1.5
1.8
2.5
3.3
TB7101AF(T5L1.2,F),TB7101AF(T5L1.5,F)
TB7101AF(T5L1.8,F),TB7101AF(T5L2.5,F)
TB7101AF(T5L3.3,F)
TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
OUT
Marking
7101G
7101H
7101K
7101F
7101J
Parts
Toshiba BiCD Integrated Circuit Silicon Monolithic
= 1.2 V/1.5 V/1.8 V/2.5 V/3.3 V (typ.)
IH(EN)
The dot (•) on the top surface indicates pin 1.
OUT
= 1.5 V, V
) with a minimum of
IL(EN)
*
Manufacturing week code
(The first week of the year is 01; the last week is 52 or 53.)
Manufacturing year code (last digit of the year of manufacture)
= 0.5 V(@V
1
Parts Marking
Lot No.
IN
= 5 V)
Weight: 0.017 g (typ.)
Pin Assignment
PGND
L
8
1
X
V
V
7
2
FB
IN
N.C.
EN
6
3
2008-05-22
SGND
N.C.
5
4

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tb7101af Summary of contents

Page 1

... TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Toshiba BiCD Integrated Circuit Silicon Monolithic TB7101AF(T5L1.2,F),TB7101AF(T5L1.5,F) TB7101AF(T5L1.8,F),TB7101AF(T5L2.5,F) TB7101AF(T5L3.3,F) Buck DC-DC Converter IC The TB7101AF is a single-chip buck DC-DC converter IC. The TB7101AF contains high-speed and low-on-resistance power MOSFETs for the main switch and synchronous rectifier to achieve high efficiency. Features • ...

Page 2

... TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Ordering Information Part Number TB7101AF (T5L*.*, F) Embossed tape (3000 units per reel) Block Diagram Undervoltage EN lockout & soft-start reference voltage Oscillator Slope compensation V FB Error amplifier 0.8V (typ.) Pin Description Pin No. Symbol 1 PGND Ground for the output section ...

Page 3

... TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Timing Chart Normal Operation OSC 0 I OUT 0 V OUT 0 V COMP OSC : Internal oscillator output signal I : Converter output current OUT V : Converter output voltage OUT V : Output voltage of error amplifier COMP I : Inductor current Switch pin voltage ...

Page 4

... Thermal Resistance Characteristic Characteristics Thermal resistance, junction and ambient Note 1: Glass epoxy board Note 2: The TB7101AF may go into thermal shutdown at the rated maximum junction temperature. Thermal design is required to ensure that the rated maximum operating junction temperature, T (Ta = 25°C) Symbol Rating Unit − ...

Page 5

... TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Electrical Characteristics TB7101AF (T5L1.2, F) Characteristics Operating input voltage Operating current Standby current EN threshold voltage EN input current V FB input voltage High-side switch on-state resistance Low-side switch on-state resistance High-side switch leakage current Low-side switch leakage current Oscillation frequency ...

Page 6

... TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Electrical Characteristics TB7101AF (T5L1.5, F) Characteristics Operating input voltage Operating current Standby current EN threshold voltage EN input current V FB input voltage High-side switch on-state resistance Low-side switch on-state resistance High-side switch leakage current Low-side switch leakage current Oscillation frequency ...

Page 7

... TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Electrical Characteristics TB7101AF (T5L1.8, F) Characteristics Operating input voltage Operating current Standby current EN threshold voltage EN input current V FB input voltage High-side switch on-state resistance Low-side switch on-state resistance High-side switch leakage current Low-side switch leakage current Oscillation frequency ...

Page 8

... TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Electrical Characteristics TB7101AF (T5L2.5, F) Characteristics Operating input voltage Operating current Standby current EN threshold voltage EN input current V FB input voltage High-side switch on-state resistance Low-side switch on-state resistance High-side switch leakage current Low-side switch leakage current Oscillation frequency ...

Page 9

... TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Electrical Characteristics TB7101AF (T5L3.3, F) Characteristics Operating input voltage Operating current Standby current EN threshold voltage EN input current V FB input voltage High-side switch on-state resistance Low-side switch on-state resistance High-side switch leakage current Low-side switch leakage current Oscillation frequency ...

Page 10

... Generally, ΔIL should be set to approximately 30% of the maximum output current. Since the maximum output current of the TB7101AF ΔIL should be 0 so. Therefore, the inductor should have a current rating greater than the peak output current of 1. the inductor current rating is exceeded, the inductor becomes saturated, leading to an unstable DC-DC converter operation ...

Page 11

... Use a ceramic capacitor as the output filter capacitor. Since a ceramic capacitor is generally sensitive to temperature, choose one with excellent temperature characteristics (such as the JIS B characteristic rule of thumb, its capacitance should be 10 μF or greater for TB7101AF (T5L3.3, F), TB7101AF (T5L2.5, F), TB7101AF (T5L1.8, F), and 20 μF or greater for TB7101AF (T5L1.5, F), TB7101AF (T5L1.2, F). The capacitance should be set to an optimal value that meets the system's ripple voltage requirement and transient load response characteristics. Since the ceramic capacitor has a very low ESR value, it helps reduce the output ripple voltage ...

Page 12

... The TB7101AF provides thermal shutdown. When the junction temperature continues to rise and reaches T (160°C typ.), the TB7101AF goes into thermal shutdown and shuts off the power supply. TSD has a hysteresis of about 20°C. The device is enabled again when the junction temperature has dropped by approximately 20°C from the TSD trip point ...

Page 13

... I – 2 2.7 V TB7101AF(T5L1.2,F) - 100 125 Junction temperature, T (° – T IH(EN) IL(EN 2.7 V TB7101AF(T5L1.2,F) V IH(EN) V IL(EN) - 100 125 50 Junction temperature, T (° – V IH(EN 5 25°C TB7101AF(T5L1.2, input voltage, V (V) ...

Page 14

... Junction temperature, T (°C) j 2.6 2.5 2.4 2.3 125 -50 -25 Junction temperature, T 1.2 1.1 1 0.9 0.8 2.7 2 100 125 – UVR j Recovery voltage V UVR Detection voltage TB7101AF(T5L1.2, 100 125 (° – V ocs 25°C TB7101AF(T5L1.2, Input voltage, V (V) IN 2008-05-22 ...

Page 15

... Output current – I OUT OUT 25° 3.3 μ OUT = 10 μF TB7101AF (T5L2.5, F) 0.4 0.6 0.8 1 (A) OUT – I OUT OUT 3. 25° 3.3 μ OUT = 10 μF TB7101AF (T5L1.8, F) 0.4 0.6 0.8 1 (A) OUT – I OUT OUT 3. 25° 3.3 μ OUT = 22 μF TB7101AF (T5L1.5, F) 0.4 0.6 0.8 1 (A) OUT ...

Page 16

... I OUT OUT 3. 25° 3.3 μ OUT = 22 μF TB7101AF (T5L1.2, F) 0.4 0.6 0.8 1 (A) OUT – I OUT OUT I OUT = 0. 25° 3.3 μ OUT = 10 μF TB7101AF (T5L2. (V) IN ΔV – V OUT IN I OUT = 0. 25° 3.3 μ OUT = 22 μF TB7101AF (T5L1. (V) ...

Page 17

... Output current η – I OUT 25° 3.3 μ OUT = 10 μF TB7101AF (T5L3.3, F) 0.4 0.6 0.8 1 (A) OUT η – I OUT 3. 25° 3.3 μ OUT = 10 μF TB7101AF (T5L1.8, F) 0.4 0.6 0.8 1 (A) OUT η – I OUT 3. 25° 3.3 μ OUT = 22 μF TB7101AF (T5L1.5, F) 0.4 0.6 0.8 1 (A) ...

Page 18

... Output current, I Load Response 3 25° 3.3 μH, C OUT = 22 μF TB7101AF (T5L1. η – I OUT 3.3V 25° 3.3 μ OUT = 22 μF TB7101AF (T5L1.2, F) 0.4 0.6 0.8 1 (A) OUT Output voltage V OUT (200 mV/Div) Output current: I OUT : (10 mA→800 mA→10 mA) 40 μs/div 2008-05-22 ...

Page 19

... TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Board Layout Example Component side silk Component side pattern Solder side silk Solder side pattern 19 2008-05-22 ...

Page 20

... Figure 6 Circuit of the Board Layout Example External Component Examples Label IC1 Toshiba Corporation C1 Murata Manufacturing Co., Ltd. C2 Murata Manufacturing Co., Ltd. L1 Taiyo Yuden Co., Ltd. TP1 IC1 L1 8 PGND N.C. 5 SGND N.C. TP2 Vendor Part Number TB7101AF(T5L*.*,F) GRM21BB30J106K GRM21BB30J106K NP04SB3R3N 20 TP3 V OUT GND 2008-05-22 ...

Page 21

... TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Package Dimensions : 0.017 g (typ.) Weight 21 2008-05-22 ...

Page 22

... TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress ...

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