km416s8030 Samsung Semiconductor, Inc., km416s8030 Datasheet
km416s8030
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km416s8030 Summary of contents
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... LCBR CLK CKE GENERAL DESCRIPTION The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized 2,097,152 words by 16 bits, fabricated with SAMSUNG s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clcok cycle ...
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... KM416S8030 PIN CONFIGURATION (TOP VIEW) A10/AP PIN FUNCTION DESCRIPTION PIN NAME CLK System Clock CS Chip Select CKE Clock Enable Address Bank Select Address 0 1 RAS Row Address Strobe CAS Column Address Strobe WE Write Enable L(U)DQM Data Input/Output Mask ...
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... KM416S8030 ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...
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... Bank Active CC3 Operating Current I CC4 (Burst Mode) Refresh Current I CC5 Self Refresh Current I CC6 Note : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. KM416S8030T-G** 4. KM416S8030T-F CAS Test Condition Latency Burst Length = (min CKE V (max), t ...
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... KM416S8030 AC OPERATING TEST CONDITIONS Parameter Input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition 3.3V 1200 Output 50pF 870 (Fig Output Load Circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) ...
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... KM416S8030 AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol CAS latency=3 CLK cycle time t CC CAS latency=2 CAS latency=3 CLK to valid t SAC output delay CAS latency=2 CAS latency=3 Output data t OH hold time CAS latency=2 CLK high pulse width t CH CLK low pulse width ...
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... KM416S8030 IBIS Specification I Characteristics(Pull-up) OH Voltage 100Mhz 100Mhz min max (V) I(mA) I(mA) 3.45 -2.4 3.3 -27 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2 -58.7 -197 1.8 -67.3 -226.2 1.65 -73 -248 1.5 -77.9 -269.7 1.4 -80.8 -284.3 1 -88.6 -344.5 0 -93 -502.4 I Characteristics(Pull-Down) OL 100Mhz 100Mhz Voltage min max (V) I(mA) I(mA) 0 0.0 0.0 0.4 27.5 70.2 0.65 41.8 107.5 0.85 51.6 133.8 1 58.0 151.2 1.4 70.7 187.7 1.5 72.9 194.4 1.65 75.4 202.5 1.8 77.0 208.6 1.95 77.6 212.0 3 80.3 219.6 3.45 81.4 222.6 66Mhz and 100Mhz Pull- ...
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... KM416S8030 V Clamp @CLK,CKE, CS,DQM & VDD I(mA) 0.0V 0.0mA 0.2V 0.0mA 0.4V 0.0mA 0.6V 0.0mA 0.7V 0.0mA 0.8V 0.0mA 0.9V 0.0mA 1.0V 0.23mA 1.2V 1.34mA 1.4V 3.02mA 1.6V 5.06mA 1.8V 7.35mA 2.0V 9.83mA 2.2V 12.48mA 2.4V 15.30mA 2.6V 18.31mA V Clamp @CLK,CKE, CS,DQM & VSS I(mA) -2.6 -57.23mA -2.4 -45.77mA -2.2 -38.26mA -2.0 -31.22mA -1.8 -24.58mA -1.6 -18.37mA -1.4 -12.56mA -1.2 -7.57mA -1.0 -3.37mA -0.9 -1.75mA -0.8 -0.58mA -0.7 -0.05mA -0 ...
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... KM416S8030T-L CAS Frequency Latency 100MHz (10.0ns) 3 83MHz (12.0ns) 2 75MHz (13.0ns) 2 66MHz (15.0ns) 2 60MHz (16.7ns) 2 KM416S8030T-10 CAS Frequency Latency 100MHz (10.0ns) 3 83MHz (12.0ns) 3 75MHz (13.0ns) 2 66MHz (15.0ns) 2 60MHz (16.7ns RAS RP RRD ...
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... KM416S8030 SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Exit Bank Active & Row Addr. Read & Auto Precharge Disable Column Address Auto Precharge Enable Write & Auto Precharge Disable Column Address Auto Precharge Enable ...