km416c4000c Samsung Semiconductor, Inc., km416c4000c Datasheet
km416c4000c
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km416c4000c Summary of contents
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... CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabri- cated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Identification - KM416C4000C(5.0V, 8K Ref.) - KM416C4100C(5.0V, 4K Ref.) • Active Power Dissipation Speed ...
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... KM416C4000C, KM416C4100C PIN CONFIGURATION (Top Views) • KM416C40(1)00CS DQ0 DQ15 3 48 DQ1 DQ14 4 47 DQ2 DQ13 5 46 DQ3 DQ12 DQ4 DQ11 8 43 DQ5 DQ10 9 42 DQ6 DQ9 10 41 DQ7 DQ8 11 40 N.C N ...
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... KM416C4000C, KM416C4100C ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability ...
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... KM416C4000C, KM416C4100C DC AND OPERATING CHARACTERISTICS Symbol Power Speed I Don t care CC1 I Normal Don t care CC2 I Don t care CC3 I Don t care CC4 I Normal Don t care CC5 I Don t care CC6 Operating Current (RAS and UCAS, LCAS, Address cycling @ CC1 I : Standby Current (RAS=UCAS=LCAS=W=V CC2 ...
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... KM416C4000C, KM416C4100C CAPACITANCE (T = Parameter Input capacitance [A0 ~ A12] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition : V =5.0V 10%, Vih/Vil=2.6/0.7V, Voh/Vol=2.4/0.6V CC Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS ...
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... KM416C4000C, KM416C4100C AC CHARACTERISTICS (Continued) Parameter Refresh period (4K, Normal) Refresh period (8K, Normal) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge W delay time CAS set-up time (CAS -before-RAS refresh) CAS hold time (CAS -before-RAS refresh) ...
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... KM416C4000C, KM416C4100C TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time Column Address to RAS lead time ...
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... KM416C4000C, KM416C4100C NOTES initial pause of 200 is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles before proper device operation is achieved (min) and V (max) are reference levels for measuring timing of input signals. Transition times are measured between (min) and V (max) and are assumed to be 5ns for all inputs ...
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... KM416C4000C, KM416C4100C are referenced to the earlier CAS falling edge. 13. ASC CAH 14 specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle 15. is referenced to the later CAS falling edge at word read-modify-write cycle. ...
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... KM416C4000C, KM416C4100C WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t RCD t CAS t CSH t RCD t CAS t RAD ...
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... KM416C4000C, KM416C4100C LOWER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t RCD t CAS t RAD ...
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... KM416C4000C, KM416C4100C UPPER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t t RCD RSH ...
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... KM416C4000C, KM416C4100C WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t RCD ...
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... KM416C4000C, KM416C4100C LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...
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... KM416C4000C, KM416C4100C UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...
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... KM416C4000C, KM416C4100C WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t RCD ...
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... KM416C4000C, KM416C4100C LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...
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... KM416C4000C, KM416C4100C UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...
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... KM416C4000C, KM416C4100C WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RWC t RAS t t RCD RSH t t RCD ...
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... KM416C4000C, KM416C4100C LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RWC t RAS t t RCD RSH t CAS t RAD ...
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... KM416C4000C, KM416C4100C UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RWC t RAS t t RCD RSH t RAD t CSH ...
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... KM416C4000C, KM416C4100C FAST PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 RASP ¡ ...
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... KM416C4000C, KM416C4100C FAST PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... KM416C4000C, KM416C4100C FAST PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... KM416C4000C, KM416C4100C FAST PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... KM416C4000C, KM416C4100C FAST PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
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... KM416C4000C, KM416C4100C FAST PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
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... KM416C4000C, KM416C4100C FAST PAGE MODE WORD READ-MODIFY-WRITE CYCLE RAS CRP t RCD UCAS CRP t RCD LCAS RAD t t ASR t ASC ROW A ADDR RCS DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...
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... KM416C4000C, KM416C4100C FAST PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP t RCD LCAS RAD t t ASR t ASC ROW A ADDR RCS DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...
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... KM416C4000C, KM416C4100C FAST PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP t RCD UCAS CRP LCAS RAD t t ASR t ASC ROW A ADDR RCS DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...
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... KM416C4000C, KM416C4100C RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : Don t care ...
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... KM416C4000C, KM416C4100C HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t t RCD RSH t t RCD ...
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... KM416C4000C, KM416C4100C HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t t RCD ...
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... KM416C4000C, KM416C4100C CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS RPC UCAS LCAS DQ0 ~ DQ7 OFF DQ8 ~ DQ15 TEST MODE IN CYCLE NOTE : Don t care ...
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... KM416C4000C, KM416C4100C PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(II) 50 TSOP(II) 400mil 0.034 (0.875) 0.841 (21.35) MAX 0.821 (20.85) 0.047 (1.20) 0.829 (21.05) 0.0315 (0.80) 0.002 (0.05) MIN 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.004 (0.10) 0.010 (0.25) 0.010 (0.25) MAX TYP 0.018 (0.45) 0.030 (0.75) O 0~8 ...