km416v4000b Samsung Semiconductor, Inc., km416v4000b Datasheet - Page 4

• Manufacturer Part Number: km416v4000b
• Description: 4m X 16bit Cmos Dynamic Ram With Fast Page Mode
• Manufacturer: Samsung Semiconductor, Inc.

KM416V4000B, KM416V4100B
DC AND OPERATING CHARACTERISTICS
I
I
I
I
I
I
I
I
*Note :
CC1
CC2
CC3
CC4
CC5
CC6
CC7
CCS
Symbol
* : Operating Current (RAS and UCAS, LCAS, Address cycling @
* : RAS-only Refresh Current (UCAS=LCAS=V
* : Fast Page Mode Current (RAS=V
* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
: Standby Current (RAS=UCAS=LCAS=W=V
: Standby Current (RAS=UCAS=LCAS=W=V
: Battery back-up current, Average power supply current, Battery back-up mode
: Self Refresh Current
I
I
I
I
I
I
I
I
Input high voltage(V
W, OE=V
RAS=UCAS=LCAS=0.2V, W=OE=A0 ~ A12(A11)=V
CC1
CC2
CC3
CC4
CC5
CC6
CC7
CCS
I
I
address can be changed maximum once within one fast page mode cycle time,
CC1
CC
is specified as an average current. In I
, I
CC3
IH
, Address=Don t care DQ=Open, T
, I
Don t care
Don t care
Don t care
Don t care
CC4
Normal
Normal
Power
L
L
L
L
and I
IH
)=V
CC6
CC
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
-0.2V, Input low voltage(V
Don t care
Don t care
Don t care
Don t care
Speed
-45
-45
-45
-45
-5
-6
-5
-6
-5
-6
-5
-6
IL
, UCAS or LCAS, Address cycling @
IH
CC
IH
CC1
)
RC
, RAS, Address cycling @
-0.2V)
, I
=31.25us
CC3
KM416V4000B
CC
IL
and I
(Continued)
-0.2V or 0.2V, DQ0 ~ DQ15=V
)=0.2V, UCAS, LCAS=CAS-before-RAS cycling or 0.2V,
100
100
500
300
100
400
400
90
80
90
80
70
60
50
90
80
2
2
CC6,
t
address can be changed maximum once while RAS=V
RC
=min.)
t
t
t
RC
RC
PC
=min)
Max
=min.)
=min.)
t
PC
.
CC
KM416V4100B
-0.2V, 0.2V or Open
130
120
110
130
120
110
500
300
130
120
110
400
400
80
70
60
2
2
CMOS DRAM
Units
IL
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
uA
uA
. In I
CC4
,