2sa1790j Panasonic Corporation of North America, 2sa1790j Datasheet
2sa1790j
Manufacturer Part Number
2sa1790j
Description
For High-frequency Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SA1790J.pdf
(3 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SA1790J
Manufacturer:
Panasonic
Quantity:
286
Part Number:
2sa1790jCL
Manufacturer:
PANASON
Quantity:
20 000
Transistors
2SA1790J
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4626J
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2003
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• SS-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance (Common emitter)
automatic insertion through the tape packing
2. * : Rank classification
Rank
Parameter
Parameter
h
FE
70 to 140
*
T
B
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
P
CBO
I
T
CEO
EBO
a
110 to 220
I
I
I
stg
V
C
CE(sat)
C
h
NF
CBO
Z
C
j
CEO
EBO
f
= 25°C
FE
BE
T
rb
re
C
−55 to +125
Rating
V
V
V
V
V
I
V
V
V
V
C
−30
−20
−30
125
125
CB
CB
CB
CE
CB
CE
EB
CE
CB
−5
= −10 mA, I
SJC00291AED
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= −20 V, I
= −5 V, I
= −10 V, I
= −10 V, I
= −10 V, I
Conditions
Unit
mW
C
mA
E
E
E
°C
°C
V
V
V
B
C
B
C
E
E
= 0
= 1 mA, f = 200 MHz
= 1 mA, f = 5 MHz
= 1 mA, f = 2 MHz
= −1 mA
= −1 mA
= 0
= 0
= −1 mA
= 1 mA, f = 10.7 MHz
Marking Symbol: E
Unit: mm
EIAJ: SC-89
SSMini3-F1 Package
0.27
±0.02
5˚
(0.50)(0.50)
1.60
1.00
3
1
Min
150
70
+0.05
–0.03
±0.05
2
− 0.7
− 0.1
Typ
300
1.2
2.8
22
− 0.1
−100
Max
−10
220
4.0
2.0
50
0.12
+0.03
–0.01
1: Base
2: Emitter
3: Collector
MHz
Unit
µA
µA
µA
dB
pF
V
V
Ω
1
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2sa1790j Summary of contents
Page 1
... Transistors 2SA1790J Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4626J ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency f T • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings T ...
Page 2
... 120 120 ( °C ) Ambient temperature T a 100 = − 75° 25°C 80 −25° − 0.1 −1 −10 −100 Collector current I (mA −25 = 25° −250 µA ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...