2sa1312

Manufacturer Part Number2sa1312
DescriptionToshiba Transistor Silicon Pnp Epitaxial Type
ManufacturerTOSHIBA Semiconductor CORPORATION
2sa1312 datasheet
 
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Audio Frequency Low Noise Amplifier Applications
·
High voltage: V
= −120 V
CEO
Excellent h
linearity: h
(I
·
FE
FE
h= 0.95 (typ.)
High h
h
= 200~700
·
FE:
FE
·
Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz
·
Complementary to 2SC3324
·
Small package
(Ta = = = = 25°C)
Maximum Ratings
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Marking
2SA1312
= −0.1 mA)/ h
(I
= −2 mA)
C
FE
C
Symbol
Rating
-120
V
CBO
-120
V
CEO
-5
V
EBO
-100
I
C
-20
I
B
P
150
C
T
125
j
-55~125
T
stg
1
Unit
V
V
V
mA
mA
JEDEC
TO-236MOD
mW
JEITA
SC-59
°C
TOSHIBA
2-3F1A
°C
Weight: 0.012 g (typ.)
2003-03-27
2SA1312
Unit: mm

2sa1312 Summary of contents

  • Page 1

    ... Storage temperature range Marking 2SA1312 = −0.1 mA −2 mA Symbol Rating -120 V CBO -120 V CEO -5 V EBO -100 150 C T 125 j -55~125 T stg 1 Unit JEDEC TO-236MOD mW JEITA SC-59 °C TOSHIBA 2-3F1A °C Weight: 0.012 g (typ.) 2003-03-27 2SA1312 Unit: mm ...

  • Page 2

    ... - MHz -0.1 mA 100 Hz ( -0.1 mA kHz ( 2SA1312 Min Typ. Max Unit ¾ ¾ -0.1 mA ¾ ¾ -0.1 mA ¾ 200 700 ¾ ¾ -0.3 V ¾ ¾ 100 MHz ¾ ...

  • Page 3

    ... 3 2SA1312 2003-03-27 ...

  • Page 4

    ... 4 2SA1312 2003-03-27 ...

  • Page 5

    ... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2SA1312 000707EAA 2003-03-27 ...