2sa1810 Renesas Electronics Corporation., 2sa1810 Datasheet - Page 2

• Manufacturer Part Number: 2sa1810
• Description: Silicon Pnp Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SA1810
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Note:
B
60 to 120
2
1. Value at T
1. The 2SA1810 is grouped by h
C
100 to 200
C
= 25 C.
Symbol
V
V
V
I
h
V
V
f
Cob
CBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
BE
CE(sat)
*
1
FE
Min
–200
–200
–5
—
60
—
—
200
—
as follows.
Symbol
V
V
V
I
I
P
P
Tj
Tstg
Typ
—
—
—
—
—
—
—
300
5.0
C
C(peak)
CBO
CEO
EBO
C
C
*
1
Max
—
—
—
–10
200
–1.0
–1.0
—
—
Unit
V
V
V
V
V
MHz
pF
A
Ratings
–200
–200
–5
–0.2
–0.5
1.25
10
150
–55 to +150
Test conditions
I
I
I
V
V
V
I
V
V
C
C
E
C
CB
CE
CE
CE
CB
= –10 A, I
= –10 A, I
= –1 mA, R
= –30 mA, I
= –160 V, I
= –5 V, I
= –5 V, I
= –20 V, I
= –30 V, I
Unit
V
V
V
A
A
W
C
C
C
C
C
E
C
E
BE
= –10 mA
= –30 mA
B
= 0
= 0
E
= 0, f = 1 MHz
= –30 mA
= –3 mA
=
= 0