2sa1845 Renesas Electronics Corporation., 2sa1845 Datasheet - Page 2

• Manufacturer Part Number: 2sa1845
• Description: Pnp Silicon Epitaxial Transistor For High-speed Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
* Pulse test PW ≤ 350 µ s, duty cycle ≤ 2%
h
2
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
Turn-on time
Storage time
Fall time
FE
Marking
CLASSIFICATION
h
FE
Parameter
PACKAGE DRAWING (UNIT: mm)
100 to 200
M
V
V
V
V
Symbol
h
h
h
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
I
I
I
I
I
CEX1
CEX2
C
t
CBO
CER
EBO
FE1
FE2
FE3
t
f
stg
t
on
T
ob
f
150 to 300
*
*
*
*
*
*
*
Electrode Connection
1. Base
2. Collector
3. Emitter
L
V
V
Ta = 125°C
V
V
Ta = 125°C
V
V
V
V
I
I
I
I
V
V
I
I
R
C
C
C
C
C
B1
CB
CE
CE
CE
EB
CE
CE
CE
CE
CB
L
= −3.0 A, I
= −4.0 A, I
= −3.0 A, I
= −4.0 A, I
= −3.0 A
= −I
= 16.7 Ω, V
= −100 V, I
= −100 V, R
= −100 V, V
= −100 V, V
= −5.0 V, I
= −2.0 V, I
= −2.0 V, I
= −2.0 V, I
= −10 V, I
= −10 V, I
Data Sheet D15592EJ2V0DS
B2
= −0.15 A
B
B
B
B
200 to 400
C
E
Conditions
= −0.15 A
= −0.2 A
= −0.15 A
= −0.2 A
C
C
C
C
CC
E
= 0, f = 1 MHz
= −0.5 A
TAPING SPECIFICATION
BE(off)
BE(off)
EB
= 0
= −0.5 A
= −1.0 A
= −3.0 A
= 0
= −50 V
K
= 50 Ω
= 1.5 V
= 1.5 V
MIN.
100
100
60
TYP.
150
130
MAX.
−1.0
−1.0
−0.3
−0.5
−1.2
−1.5
−10
−10
−10
400
0.3
1.4
0.4
MHz
Unit
mA
mA
µ A
µ A
µ A
pF
µ s
µ s
µ s
V
V
V
V
2SA1845
−
−
−