2sc5508 Renesas Electronics Corporation., 2sc5508 Datasheet - Page 2

• Manufacturer Part Number: 2sc5508
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS (T
h
2
Junction to Case Resistance
Junction to Ambient Resistance
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Maximum Available Power Gain
Maximum Stable Power Gain
Gain 1 dB Compression Output Power
3rd Order Intermodulation Distortion
Output Intercept Point
FE
Notes 1. Pulse measurement: PW ≤ 350
CLASSIFICATION
h
Marking
FE
2. Collector to base capacitance when the emitter grounded
3. MAG =
4. MSG =
5. Collector current when P
Rank
Value
Parameter
Parameter
S
S
S
S
21
12
21
12
(K –
√
50 to 100
(K
T79
FB
2
Symbol
MAG
MSG
– 1) )
O (1 dB)
Symbol
R
R
h
P
C
|S
OIP
FE
th j-c
th j-a
I
I
O (1 dB)
re
NF
CBO
EBO
f
21e
Note 2
Note 1
T
Note 3
Note 4
|
3
2
is output
µ
A
s, Duty Cycle ≤ 2%
Data Sheet PU10521EJ01V0DS
= +25 °C)
V
V
V
V
V
V
Z
V
V
V
V
V
S
CB
EB
CE
CE
CE
CE
CB
CE
CE
CE
CE
= Z
= 5 V, I
= 1 V, I
= 2 V, I
= 3 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
opt
Ratings
150
650
E
C
C
C
C
C
E
C
C
C
C
Test Conditions
= 0 mA
= 0 mA
= 5 mA
= 30 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 0 mA, f = 1 MHz
= 20 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 20 mA
= 20 mA
= 5 mA, f = 2 GHz,
Note 5
Note 5
, f = 2 GHz
, f = 2 GHz
°C/W
°C/W
Unit
MIN.
50
20
14
–
–
–
–
–
–
–
–
TYP.
0.18
1.1
70
25
17
19
20
11
22
–
–
MAX.
0.24
200
200
100
1.5
–
–
–
–
–
–
2SC5508
dBm
dBm
GHz
Unit
nA
nA
dB
dB
pF
dB
dB
–