2sc5508 Renesas Electronics Corporation., 2sc5508 Datasheet - Page 3

• Manufacturer Part Number: 2sc5508
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
Thermal/DC Characteristics
Capacitance/f
Remark The graphs indicate nominal characteristics.
0.50
0.40
0.30
0.20
0.10
Ambient Temperature T
0
REVERSE TRANSFER CAPACITANCE
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
250
200
150
100
vs. COLLECTOR TO BASE VOLTAGE
0
50
50
40
30
20
10
0
0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0
0
Collector to Base Voltage V
1.0
T
25
P
P
P
Collector to Emitter Voltage V
Characteristics
tot
tot
tot
(15 mm × 15 mm, t = 0.6 mm)
1
-T
-T
-T
C
A
A
: When case temperature
: Free air
: Mounted on ceramic board
2.0
is specified
50
2
A
(˚C), Case Temperature T
75
3.0
3
f = 1 MHz
100
CB
500 A
450 A
400 A
350 A
300 A
250 A
200 A
150 A
100 A
I
B
4.0
(V)
A
= 50 A
= +25°C, unless otherwise specified)
µ
µ
µ
µ
µ
µ
µ
µ
µ
CE
4
125
µ
(V)
5.0
Data Sheet PU10521EJ01V0DS
150
5
C
(˚C)
30
25
20
15
10
5
0
1
200
100
V
f = 2 GHz
10
50
40
30
20
10
1
CE
0.001
0
GAIN BANDWIDTH PRODUCT
= 3 V
vs. COLLECTOR CURRENT
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
CE
0.2
Collector Current I
= 2 V
0.01
COLLECTOR CURRENT
Base to Emitter Voltage V
DC CURRENT GAIN vs.
Collector Current I
0.4
0.1
10
0.6
C
(mA)
1
C
0.8
(mA)
V
BE
CE
10
(V)
= 2 V
1.0
100
2SC5508
100
1.2
3