mmbt9013l-x-ae3-r Unisonic Technologies, mmbt9013l-x-ae3-r Datasheet - Page 3

• Manufacturer Part Number: mmbt9013l-x-ae3-r
• Description: Npn Silicon Transistor
• Manufacturer: Unisonic Technologies

MMBT9013
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
10000
TYPICAL CHARACTERICS
3000
1000
20
18
16
14
12
10
500
300
100
8
6
4
2
0
50
30
10
0
1
www.unisonic.com.tw
I
UNISONIC TECHNOLOGIES CO., LTD
Collector - Emitter Voltage, V
C
=10I
Collector-Emitter Saturation Voltage
3
Collector Current, I
10
Base-Emitter Saturation Voltage
B
10
Static Characteristic
20
30
100
30
V
V
C
300
BE (SAT)
CE (SAT)
(mA)
I
I
I
I
I
I
I
B
B
B
B
B
B
B
=140μA
=120μA
=100μA
=80μA
=60μA
=40μA
=20μA
1000
40
CE
(V)
3000
50
10000
1000
1000
500
300
100
500
300
100
50
30
10
50
30
10
1
5
3
5
3
1
1
1
I
NPN SILICON TRANSISTOR
C
=10I
3
3
Current Gain-Bandwidth Product
5
B
Collector Current, I
10
10
Collector Current, I
Dc Current Gain
30
30
50
100
100
V
CE
=6V
300
300
C
1000
(mA)
1000
C
(mA)
V
3000
3000
QW-R206-021.B
CE
=1V
10000
10000
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