2sc4655j Panasonic Corporation of North America, 2sc4655j Datasheet

no-image

2sc4655j

Manufacturer Part Number
2sc4655j
Description
Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2sc4655j/BC/X
Manufacturer:
PANASONIC
Quantity:
3 000
Part Number:
2sc4655j/BC/X
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Transistors
2SC4655J
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: September 2004
• Optimum for RF amplification, oscillation, mixing, and IF of
• SS-Mini type package, allowing downsizing of the equipment
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
Transition frequency
Reverse transfer capacitance
(Common emitter)
FM/SAM radios
and automatic insertion through the tape packing
2. * : Rank classification
Rank
Parameter
Parameter
h
FE
70 to 160
*
B
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
P
CBO
I
T
V
V
V
CEO
EBO
a
110 to 250
stg
C
C
h
C
j
f
CBO
CEO
EBO
= 25°C
FE
T
re
C
−55 to +125
Rating
I
I
I
V
V
V
C
C
E
125
125
CE
CB
CB
30
20
30
= 10 µA, I
= 2 mA, I
= 10 µA, I
5
SJC00314AED
= 10 V, I
= 10 V, I
= 10 V, I
B
C
E
Conditions
Unit
E
mW
C
E
mA
= 0
°C
°C
= 0
= 0
V
V
V
= −1 mA, f = 200 MHz
= 1 mA
= −1 mA, f = 10.7 MHz
Marking Symbol: K
0.27
1 : Base
2 : Emitter
3 : Collector
±0.02
(0.50)(0.50)
1.60
1.00
3
1
Min
150
+0.05
–0.03
±0.05
30
20
70
5
2
Typ
230
1.3
SSMini3-F1 Package
Max
250
0.12
EIAJ : SC-89
+0.03
–0.01
Unit: mm
MHz
Unit
pF
V
V
V
1

Related parts for 2sc4655j

2sc4655j Summary of contents

Page 1

... Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification ■ Features • Optimum for RF amplification, oscillation, mixing, and IF of FM/SAM radios • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings T ...

Page 2

... 140 120 100 120 ( °C ) Ambient temperature T a  CE(sat 0.1 = 85° −25°C 25°C 0.01 0 100 Collector current I (mA  25° 200 µ 180 µ ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

Related keywords