2sc4808g Panasonic Corporation of North America, 2sc4808g Datasheet
2sc4808g
Manufacturer Part Number
2sc4808g
Description
Silicon Npn Epitaxial Planar Type Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC4808G.pdf
(4 pages)
Transistors
2SC4808G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
• Low noise figure NF
• High forward transfer gain S
• High transition frequency f
• SS-Mini type package, allowing downsizing of the equipment
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Forward transfer gain
Maximum unilateral power gain
Noise figure
and automatic insertion through the tape packing.
2. * : Pulse measurement
Parameter
Parameter
This product complies with the RoHS Directive (EU 2002/95/EC).
*
T
21e
a
2
Symbol
= 25°C ± 3°C
V
V
V
Symbol
S
T
P
CBO
I
T
V
V
CEO
EBO
a
G
I
I
stg
C
C
C
h
NF
CBO
j
EBO
f
21e
CBO
CEO
= 25°C
UM
FE
T
ob
2
−55 to +125
Rating
I
I
V
V
V
V
V
V
V
V
C
C
125
125
CB
EB
CE
CE
CB
CE
CE
CE
15
10
80
= 10 µA, I
= 100 µA, I
2
SJC00395AED
= 2 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 10 V, I
= 10 V, I
C
C
C
C
C
C
E
Conditions
Unit
mW
E
E
mA
B
= 0
= 20 mA
= 15 mA, f = 0.8 GHz
= 15 mA, f = 0.8 GHz
= 15 mA, f = 0.8 GHz
= 7 mA, f = 0.8 GHz
°C
°C
= 0
V
V
V
= 0
= 0, f = 1 MHz
= 0
■ Package
• Code
• Marking Symbol: 3M
• Pin Name
SSMini3-F3
1. Base
2. Emitter
3. Collector
Min
15
10
50
11
5
Typ
150
0.7
1.3
14
15
6
Max
300
1.2
2.0
1
1
GHz
Unit
µA
µA
pF
dB
dB
dB
V
V
1
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2sc4808g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC4808G Silicon NPN epitaxial planar type For UHF band low-noise amplification ■ Features • Low noise figure NF • High forward transfer gain S 21e • High transition frequency f T • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. ■ ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4808G 140 120 100 120 ( °C ) Ambient temperature T a CE(sat 0.1 = 85° −25°C 25°C 0.01 0 100 Collector current I (mA) ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). SSMini3-F3 +0.05 1.60 − 0.03 +0.05 0.26 − 0. (0.50) (0.50) 1.00 ±0.05 (5°) Unit: mm +0.05 0.13 − 0.02 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...