2sc4835g Panasonic Corporation of North America, 2sc4835g Datasheet

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2sc4835g

Manufacturer Part Number
2sc4835g
Description
Silicon Npn Epitaxial Planar Type Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistors
2SC4835G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
• Low noise figure NF
• High forward transfer gain S
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Forward transfer gain
Maximum unilateral power gain
Noise figure
and automatic insertion through the tape packing and the maga-
zine packing
2. * 1: Pulse measurement
* 2: Rank classification
Parameter
Rank
Parameter
h
FE
This product complies with the RoHS Directive (EU 2002/95/EC).
50 to 100
* 1, 2
T
Q
21e
a
2
Symbol
= 25°C ± 3°C
V
V
V
Symbol
S
T
P
CBO
I
T
V
V
CEO
EBO
a
G
I
I
stg
C
C
C
h
NF
CBO
j
EBO
f
21e
CBO
CEO
80 to 130
= 25°C
UM
FE
T
ob
2
R
−55 to +150
Rating
I
I
V
V
V
V
V
V
V
V
C
C
150
150
CB
EB
CE
CE
CB
CE
CE
CE
15
10
80
= 10 µA, I
= 100 µA, I
2
SJC00368AED
= 2 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 10 V, I
= 10 V, I
100 to 200
C
C
C
C
C
C
S
E
Conditions
Unit
mW
E
E
mA
B
= 0
= 20 mA
= 15 mA, f = 800 MHz
= 15 mA, f = 800 MHz
= 15 mA, f = 800 MHz
= 7 mA, f = 800 MHz
°C
°C
= 0
V
V
V
= 0
= 0, f = 1 MHz
= 0
■ Package
• Code
• Marking Symbol: 3M
• Pin Name
SMini3-F2
1: Base
2: Emitter
3: Collector
Min
15
10
50
11
5
Typ
0.7
1.3
14
15
6
Max
200
1.2
2.0
1
1
GHz
Unit
µA
µA
pF
dB
dB
dB
V
V
1

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2sc4835g Summary of contents

Page 1

... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC4835G Silicon NPN epitaxial planar type For UHF band low-noise amplification ■ Features • Low noise figure NF • High forward transfer gain S 21e • High transition frequency f T • S-Mini type package, allowing downsizing of the equipment ...

Page 2

... This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4835G  200 160 120 120 160 ( °C ) Ambient temperature T a  CE(sat) C 100 = 75° 25°C −25°C 0.1 0.01 0 100 ( mA ) Collector current I C  ...

Page 3

This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 2.00 ±0.20 +0.05 0.30 − 0. (0.65) (0.65) 1.30 ±0.10 (5°) Unit: mm +0.05 0.13 − 0.02 ...

Page 4

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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