ssm6k202fe TOSHIBA Semiconductor CORPORATION, ssm6k202fe Datasheet - Page 2

• Manufacturer Part Number: ssm6k202fe
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Switching Time Test Circuit
Notice on Usage
this product. For normal switching operation, V
voltage than V
Handling Precaution
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Marking
V
(The relationship can be established as follows: V
Take this into consideration when using the device.
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
(a) Test Circuit
th
can be expressed as the voltage between gate and source when the low operating current value is I
2.5 V
6
1
0
KL
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
th.
5
2
DD
IN
G
10 μs
: t
= 4.7 Ω
= 10 V
r
, t
f
4
3
< 5 ns
IN
Equivalent Circuit
V
DD
OUT
GS (on)
6
1
GS (off)
(b) V
(c) V
requires a higher voltage than V
5
2
< V
2
OUT
IN
4
3
th
(top view)
< V
GS (on).
V
DS (ON)
)
2.5 V
V
0 V
DD
th
and V
t
10%
on
GS (off)
t
r
SSM6K202FE
10%
90%
requires a lower
90%
t
D
2007-11-01
off
t
= 1 mA for
f