ssm6k24fe TOSHIBA Semiconductor CORPORATION, ssm6k24fe Datasheet - Page 2

• Manufacturer Part Number: ssm6k24fe
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Precaution
this product. For normal switching operation, V
voltage than V
(The relationship can be established as follows: V
V
Please take this into consideration when using the device.
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note2: Pulse test
(a) Test Circuit
th
can be expressed as the voltage between gate and source when the low operating current value is I
2.5 V
0
Characteristics
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
th.
DD
IN
G
10 μs
: t
= 4.7 Ω
= 10 V
r
, t
f
Turn-on time
Turn-off time
< 5 ns
IN
(Ta = 25°C)
V
V
V
R
Symbol
(BR) DSS
(BR) DSX
DD
DS (ON)
⏐Y
OUT
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
rss
iss
th
fs
GS (on)
⏐
GS (off)
V
I
I
V
V
V
I
I
V
V
V
V
V
D
D
D
D
(b) V
(c) V
GS
DS
DS
DS
DS
DS
DS
DD
GS
requires a higher voltage than V
= 1 mA, V
= 1 mA, V
= 0.50 A, V
= 0.25 A, V
< V
= 30 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= 10 V, V
= 10 V, V
= ± 1 2 V, V
= 10 V, I
= 0~2.5 V, R
2
OUT
IN
th
< V
D
D
Test Condition
GS
GS
D
GS
GS
= 0.1 mA
= 0.25 A
GS
GS
GS
GS
GS (on)
DS
= 0.25 A,
= 0
= −12 V
= 4.5 V
= 2.5 V
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
G
= 0
= 4.7 Ω
)
V
DS (ON)
2.5 V
V
0 V
DD
(Note2)
(Note2)
(Note2)
th
and V
Min
0.5
1.0
30
18
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
10%
on
GS (off)
t
r
Typ.
10%
90%
120
140
245
2.0
33
41
15
⎯
⎯
⎯
⎯
⎯
9
SSM6K24FE
requires a lower
90%
t
D
2007-11-01
off
Max
145
180
1.1
t
±1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
f
= 100 μA for
1
Unit
mΩ
μA
μA
pF
pF
pF
ns
V
V
S